Novel SnO2-coated β-Ga2O3 nanostructures for room temperature hydrogen gas sensor

Nanostructured beta-Ga2O3 nanobelts are fabricated by thermal evaporation method at a temperature around of 1120 degrees C. Subsequently, a sol-gel processed SnO2 layer is employed to coat beta-Ga2O3 nanobelts. This simple deposition technique is confirmed to be a promising route to incorporate a coating material onto nanostructured films, resulting in an attractive approach to modify the functionality of gallium oxide. In comparison with the data reported in the literature, the sensing characteristics of SnO2-functionalized beta-Ga2O3 nanobelts to analyte gas H-2 in the concentration range (33-1000 ppm) and within the temperature range (room temperature 200 degrees C) are found to be greatly improved. (C) 2020 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.

Automated summary

Nanostructured beta-Ga2O3 nanobelts were successfully fabricated using a thermal evaporation method, and a sol-gel processed SnO2 layer was deposited to modify the functionality of gallium oxide. The sensing characteristics of SnO2-functionalized beta-Ga2O3 nanobelts towards analyte gas H2 were found to be greatly improved within a certain concentration range.