Tunable Electronic Trap Energy in Sol-Gel Processed Dielectrics

We demonstrate the electronic trap energy distribution (Delta E-IL) in the wide bandgap, nonconventional aluminum oxide phosphate (ALPO) dielectrics. The trap energy distribution has been measured by using the gate injection high-speed capacitance-voltage measurement technique and verified through conventional deep-level transient spectroscopy. The electronic trap energies in ALPO dielectrics were found to be influenced and, hence, tunable by the irradiation temperature. The nonirradiated dielectric film (NI-ALPO) displayed the maximum number of electronic traps at an energy level of 0.2 eV below the conduction band of silicon (Si-E-CB). On the other hand, the dielectric film irradiated at 200 C confirmed the highest number of traps at the location of 0 eV and at the same energy level of Si-EcB. In addition, the NI-ALPO dielectric contained over 90% of traps in the deep level of the bandgap (below Si-E-CB). In contrast, the ALPO film irradiated at 200 C accommodated a limited number of traps (similar to 75%) at the deep level of the bandgap.

Automated summary

The electronic trap energy distribution in the ALPO dielectrics is influenced and tunable by the irradiation temperature. The nonirradiated film displayed the maximum number of traps at 0.2 eV below the conduction band of silicon.