Electrical characterisation of epitaxial AlN/Nb2N heterostructures grown by molecular beam epitaxy

标题
Electrical characterisation of epitaxial AlN/Nb2N heterostructures grown by molecular beam epitaxy
作者
关键词
-
出版物
ELECTRONICS LETTERS
Volume 52, Issue 14, Pages 1263-1264
出版商
Institution of Engineering and Technology (IET)
发表日期
2016-05-05
DOI
10.1049/el.2016.0331

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