标题
Synthesis and electronic properties of InSe bi-layer on Si(111)
作者
关键词
Band structure, 2d materials, Selenide
出版物
APPLIED SURFACE SCIENCE
Volume 539, Issue -, Pages 148144
出版商
Elsevier BV
发表日期
2020-10-27
DOI
10.1016/j.apsusc.2020.148144
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Trivial band topology of ultra-thin rhombohedral Sb2Se3 grown on Bi2Se3
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