期刊
ACS NANO
卷 15, 期 3, 页码 4213-4225出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.0c05936
关键词
1T ' molybdenum ditelluride; chemical vapor deposition; environmental stability; hBN encapsulation; large area
类别
资金
- European Union's Horizon 2020 research and innovation program [785219-GrapheneCore2, 881603-GrapheneCore3]
- Compagnia di San Paolo (project STRATOS)
In this study, large single-crystal monolayer 1T'-MoTe2 was successfully grown via CVD and stabilized in air through a scalable encapsulation approach. The encapsulation with hBN increased the lifetime of monolayer 1T'-MoTe2 from a few minutes to over a month, allowing for transfer, device processing, and thermal cycling without degradation. This scalable heterostack method opens up possibilities for further fundamental studies and technological advancements of monolayer 1T'-MoTe2.
Out of the different structural phases of molybdenum ditelluride (MoTe2), the distorted octahedral 1T' possesses great interest for fundamental physics and is a promising candidate for the implementation of innovative devices such as topological transistors. Indeed, 1T'-MoTe2 is a semimetal with superconductivity, which has been predicted to be a Weyl semimetal and a quantum spin Hall insulator in bulk and monolayer form, respectively. Large instability of monolayer 1T'-MoTe2 in environmental conditions, however, has made its investigation extremely challenging so far. In this work, we demonstrate homogeneous growth of large single-crystal (up to 500 mu m) monolayer 1T'-MoTe2 via chemical vapor deposition (CVD) and its stabilization in air with a scalable encapsulation approach. The encapsulant is obtained by electrochemically delaminating CVD hexagonal boron nitride (hBN) from copper foil, and it is applied on the freshly grown 1T'-MoTe2 via a top-down dry lamination step. The structural and electrical properties of encapsulated 1T'-MoTe2 have been monitored over several months to assess the degree of degradation of the material. We find that when encapsulated with hBN, the lifetime of monolayer 1T'-MoTe2 successfully increases from a few minutes to more than a month. Furthermore, the encapsulated monolayer can be subjected to transfer, device processing, and heating and cooling cycles without degradation of its properties. The potential of this scalable heterostack is confirmed by the observation of signatures of low-temperature phase transition in monolayer 1T'-MoTe2 by both Raman spectroscopy and electrical measurements. The growth and encapsulation methods reported in this work can be employed for further fundamental studies of this enticing material as well as facilitate the technological development of monolayer 1T'-MoTe2.
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