Article
Chemistry, Multidisciplinary
Sunghun Lee, Linh Truong, Myoung-Jae Lee, Seung-Hyun Chun
Summary: Two approaches for the exfoliation of SnSe2 bulk crystals were reported in this study - electrochemical and mechanical methods. High quality single crystalline flakes were obtained from both methods, showing distinct thickness and lateral size distributions. Mechanical exfoliation produced SnSe2 flakes with peculiar behavior in photocurrent measurements.
CRYSTAL GROWTH & DESIGN
(2021)
Article
Chemistry, Multidisciplinary
Zilong Wu, Yuhan Zhu, Feng Wang, Chuyun Ding, Yanrong Wang, Xueying Zhan, Jun He, Zhenxing Wang
Summary: By constructing vertical metal-semiconductor-metal structures and setting them into a low-resistance state, we successfully reduce the contact resistance of two-dimensional semiconductors and improve their current density. This strategy is applicable to various two-dimensional semiconductors and contact metals, demonstrating good stability and wide application potential.
Article
Chemistry, Multidisciplinary
Onejae Sul, Hojun Seo, Eunsuk Choi, Sunjin Kim, Jinsil Gong, Jiyoung Bang, Hyoungbeen Ju, Sehoon Oh, Yeonsu Lee, Hyeonjeong Sun, Minjin Kwon, Kyungnam Kang, Jinki Hong, Eui-Hyeok Yang, Yunchul Chung, Seung-Beck Lee
Summary: Development of a reliable doping method for 2D materials is crucial for their adoption in future microelectronic circuits. This study demonstrates hole doping of tungsten disulfide using a silicon substrate as the dopant medium. The fabricated devices show ultra-low power consumption, high stability, and a large output current ratio.
Article
Chemistry, Physical
Sonu Prasad Keshri, Swapan K. Pati, Amal Medhi
Summary: In this study, we calculate the carrier mobility of monolayer HfSe2 using density functional perturbation theory and Boltzmann transport equation, and accurately determine the experimental value. Compared to the previously used deformation potential model, we find that the strong electron-optical phonon interaction is one of the reasons for the low mobility. The results also show that the spin-orbit coupling significantly affects the mobility and scattering rates.
JOURNAL OF CHEMICAL PHYSICS
(2023)
Article
Engineering, Electrical & Electronic
Hasan Efeoglu, Abdulmecit Turut
Summary: This study experimentally investigates the current-voltage-temperature characteristics of different Au/Cu/n-Si Schottky-barrier diodes with varying copper thickness. The results show that the Schottky barrier height increases with decreasing copper thickness, while the average series resistance and ideality factor are almost independent of the thickness. These findings highlight the importance of copper thickness in determining the quality of the diodes.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Nanoscience & Nanotechnology
Minglei Sun, Michele Re Fiorentin, Udo Schwingenschlogl, Maurizia Palummo
Summary: Semiconducting two-dimensional materials with the chemical formula MoSi2X4 (X = N, P, or As) were studied using atomistic simulations. It was found that MoSi2X4 has promising optical properties, such as the absence of lateral valleys, small exciton binding energies, and long radiative lifetimes, making it suitable for applications in optoelectronic devices.
NPJ 2D MATERIALS AND APPLICATIONS
(2022)
Article
Chemistry, Multidisciplinary
Youwei Zhang, Wang Shen, Su Wu, Weijia Tang, Yantao Shu, Kankan Ma, Butian Zhang, Peng Zhou, Shun Wang
Summary: This study demonstrates a field-induced Schottky barrier photodiode based on transition-metal dichalcogenides, showing high responsivity and fast response time. The device achieves high data transmission rates in visible light and infrared light communication applications.
Article
Chemistry, Physical
Bo Xu, Sha Yang, Yang Li, Hui Li, Zhao-Yuan Sun, Xue-Yin Sun, Jia Zhang, Jing-Kai Qin, Ping-An Hu, Liang Zhen, Wei Liu, Cheng-Yan Xu
Summary: By inserting a two-dimensional semiconductor InSe between metal and TMDs, the large Schottky barrier height (SBH) at TMDs/metal interfaces can be effectively alleviated, leading to enhanced device performance of WSe2 and MoS2 transistors.
APPLIED SURFACE SCIENCE
(2023)
Article
Chemistry, Multidisciplinary
Jennifer Schmeink, Vladislav Musytschuk, Erik Pollmann, Stephan Sleziona, Andre Maas, Peter Kratzer, Marika Schleberger
Summary: With the study of Janus monolayer transition metal dichalcogenides, research on two-dimensional materials is advancing into new areas. In this work, we synthesize MoSSe monolayers and compare their Raman signatures with density functional theory calculations to infer limits for strain and doping levels. This reference data can be applied to estimate strain and doping in other MoSSe Janus samples, providing a reliable tool for future work.
Article
Chemistry, Physical
Yang Ding, Renxian Qi, Chenglin Wang, Qianqian Wu, Haozhe Zhang, Xiumei Zhang, Liangliang Lin, Zhengyang Cai, Shaoqing Xiao, Xiaofeng Gu, Haiyan Nan
Summary: This research proposes a novel method for creating 1T-2H-1T MoTe2 optoelectronic devices using oxygen mild plasma preparation, which improves the performance of the devices.
JOURNAL OF PHYSICAL CHEMISTRY C
(2023)
Article
Chemistry, Physical
Juwon Oh, Hung-Tzu Chang, Christopher T. Chen, Shaul Aloni, Adam Schwartzberg, Stephen R. Leone
Summary: Carrier and phonon dynamics in a multilayer WSe2 film were investigated using extreme ultraviolet (XUV) transient absorption (TA) spectroscopy. The results showed that XUV transient absorption directly revealed the occupation of optically excited holes and phonon-induced band renormalizations. Hole-induced XUV transient absorption was observed below the W O3 edge, while the signals at the Se M4,5 edges were dominated by phonon dynamics. The obtained relaxation and recombination times for holes and heating time for phonons provided valuable insights into the electron-phonon dynamics.
JOURNAL OF PHYSICAL CHEMISTRY C
(2023)
Article
Chemistry, Multidisciplinary
Chin-Sheng Pang, Ruiping Zhou, Xiangkai Liu, Peng Wu, Terry Y. T. Hung, Shiqi Guo, Mona E. Zaghloul, Sergiy Krylyuk, Albert V. Davydov, Joerg Appenzeller, Zhihong Chen
Summary: Schottky barrier transistors operate differently from conventional transistors, with gate impact on carrier injection from metal source/drain into channel. The contact gating impact in the on-state and complexities in determining true carrier concentration have not been comprehensively studied; traditional approach of deriving mobility from maximum transconductance may overestimate mobility. Experimental analysis evaluates impact of different oxide thicknesses, SB heights, and doping-induced reductions on device metrics.
Article
Physics, Applied
N. Zawadzka, T. Wozniak, M. Strawski, I. Antoniazzi, M. Grzeszczyk, K. Olkowska-Pucko, Z. Muhammad, J. Ibanez, W. Zhao, J. Jadczak, R. Stepniewski, A. Babinski, M. R. Molas
Summary: Photoluminescence from bulk HfS2 grown by the chemical vapor transport method is studied. A series of emission lines are observed at low temperature in the energy range of 1.4-1.5 eV. Intensity correlation analysis distinguishes two groups of observed excitonic transitions and their replicas involving acoustic and optical phonons. The emission is attributed to the recombination of excitons bound to iodine (I-2) molecules intercalated between layers of HfS2. The presence of I-2 molecules in the crystal is confirmed by secondary ion mass spectroscopy.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Hai Yen Le Thi, Tien Dat Ngo, Nhat Anh Nguyen Phan, Won Jong Yoo, Kenji Watanabe, Takashi Taniguchi, Nobuyuki Aoki, Jonathan P. Bird, Gil-Ho Kim
Summary: In this study, a lateral p-n junction diode is fabricated in tungsten diselenide, showing high on/off ratio, mobility, and stability.
Review
Chemistry, Physical
Nur Rabiatul Adawiyah Mohd Shah, Rozan Mohamad Yunus, Nurul Nabila Rosman, Wai Yin Wong, Khuzaimah Arifin, Lorna Jeffery Minggu
Summary: Graphene is a promising material for photocatalytic H2 production due to its high electron conductivity and surface area. Combining graphene with other materials can enhance the photocatalytic activity and improve hydrogen generation efficiency. Future challenges in H-2 generation still need to be addressed.
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
(2021)
Article
Engineering, Chemical
Somayeh Tajik, Abbas Aghaei Afshar, Saeedeh Shamsaddini, Mohammad Bagher Askari, Zahra Dourandish, Fariba Garkani Nejad, Hadi Beitollahi, Antonio Di Bartolomeo
Summary: This study developed a sensitive electrochemical sensor based on a carbon paste electrode for accurate detection of the anticancer drug dasatinib. The sensor showed excellent electrocatalytic activity towards dasatinib, enabling reliable detection at low concentrations and effective detection in the presence of doxorubicin.
INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH
(2023)
Article
Chemistry, Multidisciplinary
Alessandro Grillo, Zixing Peng, Aniello Pelella, Antonio Di Bartolomeo, Cinzia Casiraghi
Summary: This paper presents a simple and cost-effective method for fabricating printed graphene-silicon rectifying devices using inkjet printing. The devices exhibit a high ON/OFF ratio and significant photovoltaic effect, making them suitable for a wide range of electronic and optoelectronic applications.
Article
Chemistry, Multidisciplinary
Somayeh Tajik, Fatemeh Sharifi, Behnaz Aflatoonian, Antonio Di Bartolomeo
Summary: This article introduces an ultrasensitive and selective voltammetric sensor for the determination of ketoconazole (KTC) in real samples. It utilizes a modified carbon paste electrode with a sheaf-like Ce-BTC MOF nanostructure and ionic liquid. The electrode exhibits excellent electrocatalytic activity for KTC oxidation, with a detection limit of 0.04 μM and a sensitivity of 0.1342 μA·μM-1. It can effectively monitor KTC in aqueous samples.
Article
Nanoscience & Nanotechnology
Aniello Pelella, Daniele Capista, Maurizio Passacantando, Enver Faella, Alessandro Grillo, Filippo Giubileo, Nadia Martucciello, Antonio Di Bartolomeo
Summary: In this study, a photodetector with bias-tuneable current is achieved by adding a CNT/Si3N4/Si capacitor to a prefabricated metal-insulator-semiconductor diode. The device exhibits high photoresponsivity and external quantum efficiency, and can be used as an optoelectronic Boolean logic device. It also possesses the capability of self-powering.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Nanoscience & Nanotechnology
Filippo Giubileo, Daniele Capista, Enver Faella, Aniello Pelella, Woo Young Kim, Paola Benassi, Maurizio Passacantando, Antonio Di Bartolomeo
Summary: This experimental study investigates the field emission properties of commercially available graphene flowers cloth. Material characterization confirms the formation of high-quality vertical few-layers graphene nanosheets. The results demonstrate a low turn-on field and a high field enhancement factor in a small cathode-anode separation distance range. The study also shows that the turn-on field increases with distance while the field enhancement factor decreases. Additionally, the time stability of the field emission current is reported.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Nanoscience & Nanotechnology
Sadegh Azizi, Mohammad Bagher Askari, Mohammad Taghi Tourchi Moghadam, Majid Seifi, Antonio Di Bartolomeo
Summary: In this study, hybrids consisting of nickel sulfides in the form of Ni3S4-NiS (NN) and Ni3S4-NiS-rGO (NNR) were synthesized using a one-step hydrothermal method. These hybrids were evaluated as catalysts for methanol and ethanol oxidation reactions. The electrochemical analysis showed that NNR exhibited good potential and excellent cyclic stability in both reactions. NNR demonstrated higher specific surface area and electrical conductivity compared to NN. In the process of methanol oxidation, NNR showed an oxidation peak at a current density of 55 mA cm(-2) and a peak potential of 0.54 V. In ethanol oxidation, the peak was located at a current density of 11 mA cm(-2) and at a peak potential of 0.59 V. After 1000 consecutive cycles, NNR showed 97% stability in methanol oxidation and 94% stability in ethanol oxidation.
Article
Chemistry, Multidisciplinary
Mohammad Bagher Askari, Hadi Beitollahi, Antonio Di Bartolomeo
Summary: Recently, the synthesis of a three-component catalyst consisting of zirconium oxide (ZrO2), nickel oxide (NiO), and reduced graphene oxide (rGO) in the form of ZrO2/NiO/rGO has been achieved by a simple one-step hydrothermal method. The catalyst exhibited excellent methanol and ethanol electrooxidation abilities with high current densities and cyclic stabilities, making it an attractive option for anode materials in alcoholic fuel cells. The detailed characterization and electrochemical tests demonstrate the outstanding capability of this new nanocatalyst.
Article
Chemistry, Multidisciplinary
Daniele Capista, Luca Lozzi, Aniello Pelella, Antonio Di Bartolomeo, Filippo Giubileo, Maurizio Passacantando
Summary: Photodetectors based on vertical multi-walled carbon nanotube (MWCNT) film-Si heterojunctions are successfully achieved by growing MWCNTs on n-type Si substrates covered with Si3N4 layers. Spatially resolved photocurrent measurements demonstrate that higher photo detection is achieved in regions with thinner MWCNT film, resulting in nearly 100% external quantum efficiency. Therefore, a simple method utilizing scotch tape is proposed to tune the thickness and density of the as-grown MWCNT film, thereby enhancing the device photo-response.
Article
Nanoscience & Nanotechnology
Kimberly Intonti, Enver Faella, Loredana Viscardi, Arun Kumar, Ofelia Durante, Filippo Giubileo, Maurizio Passacantando, Hoi Tung Lam, Konstantinos Anastasiou, Monica F. Craciun, Saverio Russo, Antonio Di Bartolomeo
Summary: This study reports the optoelectronic characterization of few-layer ReSe2 field effect transistors at different pressures. The devices exhibit a dominant n-type behavior with low Schottky barrier and significant hysteresis. The conductance and mobility of the devices are affected by air pressure, increasing with lower pressure due to the desorption of electronegative air molecules. The photoresponse of the device changes from positive photoconductivity at higher pressure to negative photoconductivity at lower pressure, which can be explained by the desorption of molecules and the defect trapping of photogenerated carriers.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Nanoscience & Nanotechnology
Arun Kumar, Loredana Viscardi, Enver Faella, Filippo Giubileo, Kimberly Intonti, Aniello Pelella, Stephan Sleziona, Osamah Kharsah, Marika Schleberger, Antonio Di Bartolomeo
Summary: We investigated the temperature dependence of transport properties and memory behavior in ultrathin black phosphorus field-effect transistors. The devices displayed a decrease in electrical conductance and field-effect mobility as the temperature increased. The field-effect mobility was 283 cm(2)V(-1)s(-1) at 150 K and reduced to 33 cm(2)V(-1)s(-1) at 340 K when the voltage gate sweep range was +/- 50 V. The transfer characteristics exhibited an increasing hysteresis width with temperature, which was utilized to create non-volatile memories with a wider programming window at higher temperatures.
Article
Nanoscience & Nanotechnology
Kimberly Intonti, Enver Faella, Arun Kumar, Loredana Viscardi, Filippo Giubileo, Nadia Martucciello, Hoi Tung Lam, Konstantinos Anastasiou, Monica Craciun, Saverio Russo, Antonio Di Bartolomeo
Summary: The electrical behavior and photoresponse of rhenium disulfide field-effect transistors (FETs) with Cr-Au contacts were investigated, and their temperature-dependent characteristics were studied. The photocurrent was found to increase with temperature and showed a linear dependence on the incident light power at low and room temperatures, with longer rise/decay time at higher temperatures.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Arun Kumar, Enver Faella, Ofelia Durante, Filippo Giubileo, Aniello Pelella, Loredana Viscardi, Kimberly Intonti, Stephan Sleziona, Marika Schleberger, Antonio Di Bartolomeo
Summary: In this study, a simple approach for a nonvolatile opto-electronic memory device based on a MoS2 transistor with light induced charge storage capability is presented. The device exhibits a high on/off current ratio and hysteresis width modulation by air pressure, and shows persistent photoconductivity with excellent photo responsive memory performance. Furthermore, the combination of gate voltage and light can be used to control the transistor current and increase the memory window significantly.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
(2023)
Article
Nanoscience & Nanotechnology
A. Di Bartolomeo, A. Kumar, O. Durante, A. Sessa, E. Faella, L. Viscardi, K. Intonti, F. Giubileo, N. Martucciello, P. Romano, S. Sleziona, M. Schleberger
Summary: The photoconductivity of monolayer MoS2 back-gate transistors is investigated with respect to temperature and pressure. The photocurrent shows linear increase with light intensity, reaching a maximum responsivity of approximately 30 A/W in air. The photocurrent enhancement is observed at elevated temperatures and reduced pressures, which can be attributed to the desorption of adsorbates such as O2 and H2O molecules, leading to an increase in the n-doping level and channel current.
MATERIALS TODAY NANO
(2023)
Article
Chemistry, Multidisciplinary
Stephan Sleziona, Aniello Pelella, Enver Faella, Osamah Kharsah, Lucia Skopinski, Andre Maas, Yossarian Liebsch, Jennifer Schmeink, Antonio Di Bartolomeo, Marika Schleberger
Summary: Field-effect transistors based on molybdenum disulfide (MoS2) were irradiated with Xe30+ ions to introduce defects and investigate their effects on electrical properties. The irradiation resulted in decreased charge carrier mobility and increased conductivity, as well as a significantly reduced n-doping and enhanced hysteresis. The irradiated MoS2 transistor exhibited memory-like behavior with remarkably longer relaxation times compared to previous works.
NANOSCALE ADVANCES
(2023)
Article
Chemistry, Multidisciplinary
Aniello Pelella, Kimberly Intonti, Loredana Viscardi, Ofelia Durante, Daniele Capista, Maurizio Passacantando, Filippo Giubileo, Paola Romano, Mohammed Ali S. Alshehri, Manal Safar G. Alghamdi, Monica Felicia Craciun, Saverio Russo, Antonio Di Bartolomeo
Summary: Mechanically exfoliated two-dimensional alpha-In2Se3 flakes are used as channel material in field effect transistors, showing good conductivity and visible light response.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
(2023)