Largely Enhanced Photogalvanic Effects in a Phosphorene Photodetector by Strain-Increased Device Asymmetry
出版年份 2020 全文链接
标题
Largely Enhanced Photogalvanic Effects in a Phosphorene Photodetector by Strain-Increased Device Asymmetry
作者
关键词
-
出版物
Physical Review Applied
Volume 14, Issue 6, Pages -
出版商
American Physical Society (APS)
发表日期
2020-12-02
DOI
10.1103/physrevapplied.14.064003
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