期刊
NANO LETTERS
卷 20, 期 12, 页码 8866-8873出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.0c03897
关键词
van der Waals stacking; quasi one-dimensional materials; transitional metal monochalcogenide; semiconductor-to-metal transition; Tomonaga-Luttinger liquid
类别
资金
- National Key R&D Program of China [2018YFA0703700, 2018FYA0305800, 2017YFA0303500]
- National Natural Science Foundation of China [11774268, 11974012, 11634011, 11722435, 11974323]
- Strategic Priority Research Program of Chinese Academy of Sciences [XDB30000000]
- Anhui Initiative in Quantum Information Technologies [AHY170000]
Stacking of two-dimensional (2D) van der Waals (vdW) atomic sheets has been established as a powerful approach to fabricating new materials with broad versatilities and emergent functionalities. Here we demonstrate a bottom-up approach to fabricating isolated single W6Te6 wires and their lateral assemblies, offering a unique platform for investigating the elegant role of vdW coupling in 1D systems with atomic precision. We find experimentally and theoretically a single W6Te6 wire is a 1D semiconductor with a band gap of similar to 60 meV, and a semiconductor-to-metal transition takes place upon interwire vdW stacking. The metallic multiwires exhibit strong Tomonaga-Luttinger liquid characteristics with the correlation parameter g varying from g = 0.086 for biwire to g = 0.136 for six-wire assemblies, all much reduced from the Fermi liquid regime (g = 1). The present study demonstrates wire-by-wire vdW stacking is a versatile means for fabrication of 1D systems with tunable electronic properties.
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