Three-Dimensional Limit of Bulk Rashba Effect in Ferroelectric Semiconductor GeTe

标题
Three-Dimensional Limit of Bulk Rashba Effect in Ferroelectric Semiconductor GeTe
作者
关键词
-
出版物
NANO LETTERS
Volume 21, Issue 1, Pages 77-83
出版商
American Chemical Society (ACS)
发表日期
2020-12-03
DOI
10.1021/acs.nanolett.0c03161

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