4.6 Article

The role of SiC as a diffusion barrier in the formation of graphene on Si(111)

期刊

DIAMOND AND RELATED MATERIALS
卷 66, 期 -, 页码 141-148

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2016.04.011

关键词

Graphene on Si; Graphitic carbon; Si(111) substrate; Electron beam evaporation

资金

  1. Communaute Francaise de Belgique (ARC) [11/16-037]
  2. Fonds de la Recherche Scientifique F.R.S.-F.N.R.S (PDR project) [T.0172.13]

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In this paper, we investigate the role of SiC as a diffusion barrier for Si in the formation of graphene on Si(111) via direct deposition of solid-state carbon atoms in ultra-high vacuum. Therefore, various thicknesses of the SiC layer preformed on the Si substrates were produced in order to evaluate its influence on the quality of graphene formation at different substrate temperatures from 900 degrees C to 1100 degrees C. At a given temperature of 1100 degrees C, we found that a thicker SiC layer can suppress silicon-out diffusion from the substrate and improve the structural quality of the graphene layer. The samples were analyzed by low energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, and scanning tunneling microscopy. (C) 2016 Elsevier B.V. All rights reserved.

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