Article
Physics, Applied
Yujie Lv, Feng Chen, Zhenhua Zhang, Jinping Chen, Xiao Tang, Zengliang Shi, Qiannan Cui, Chunxiang Xu
Summary: Negative photoconductivity (NPC) has attracted widespread attention and has been applied in optoelectronic logic devices. However, the long negative response time caused by the trapping mechanism of photogenerated carriers limits its further application. In this study, a new heterostructure was prepared, which showed an enhanced negative response compared to previous NPC devices. The strategy used in this work provides a way to improve the negative response speed with simple operation.
APPLIED PHYSICS LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Zhi Jiang, Hezhuang Liu, Jihua Zou, Yixuan Huang, Zhaoquan Xu, Caihong Li, Desheng Liu
Summary: By optimizing the synthesis and using lead-free perovskite and mixed-dimensional heterostructure, phototransistors with high responsivity and large detectivity were successfully fabricated.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Nanoscience & Nanotechnology
Zhi Jiang, Hezhuang Liu, Jihua Zou, Yixuan Huang, Zhaoquan Xu, Caihong Li, Desheng Liu
Summary: In this study, all-inorganic lead-free perovskite single crystals with good stability were synthesized through an optimized solid reaction method. The unique hierarchical structure of CuTCNQ/Cs3Cu2I5 heterojunctions enhances light utilization efficiency and promotes charge carrier generation and transportation. The proposed lead-free perovskites and mixed-dimensional heterojunctions show promising applications for sensitive light detection.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Engineering, Electrical & Electronic
Congya You, Wenjie Deng, Xiaoqing Chen, Wencai Zhou, Zilong Zheng, Boxing An, Songyu Li, Bo Wang, Yongzhe Zhang
Summary: This study presents a vertically stacked tunneling photodetector based on WSe2/graphene/WS2 van der Waals heterostructure. By introducing graphene film into the WSe2/WS2 interface, the interface composition was improved and Fowler-Nordheim tunneling was enhanced. The device shows high responsivity, detectivity, and photocurrent/dark current ratio, outperforming devices without graphene.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Junqin Zhang, Xupeng Gong, Hao Zhang, Yintang Yang
Summary: This article proposes a p-i-n-type MoS2/Ge heterojunction photodetector based on multilayer MoS2, and explores its features using simulations. The results show a low dark current, high photocurrent, and good performance in terms of average responsivity and noise equivalent power in a wide spectral range.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Chemistry, Multidisciplinary
Yafei Yan, Minxin Li, Kai Xia, Kemeng Yang, Dun Wu, Liang Li, Guangtao Fei, Wei Gan
Summary: Researchers fabricated a van der Waals heterostructure (vdWH) photodetector composed of rhenium disulfide (ReS2) and tellurium (Te), which exhibited a sensitive and broadband photoresponse with high on/off ratios. The photodetector achieved high responsivity and specific detectivity, as well as a fast photoresponse speed. Additionally, it showed a photovoltaic effect and could be used as a self-powered photodetector (SPPD).
Article
Optics
Chandraman Patil, Chaobo Dong, Hao Wang, Behrouz Movahhed Nouri, Sergiy Krylyuk, Huairuo Zhang, Albert Davydov, Hamed Dalir, Volker J. Sorger
Summary: By constructing a two-dimensional p-n van der Waals heterojunction photodetector, we have achieved high responsivity photodetection in the near-infrared spectral region using charge separation principle. This self-powered photodetector exhibits low noise, high efficiency, and millisecond response rate, making it suitable for applications such as wearable biosensors, 3D sensing, and remote gas sensing.
PHOTONICS RESEARCH
(2022)
Article
Physics, Applied
Rafael R. Rojas-Lopez, Juliana C. Brant, Maira S. O. Ramos, Tulio H. L. G. Castro, Marcos H. D. Guimaraes, Bernardo R. A. Neves, Paulo S. S. Guimaraes
Summary: The integration of MoS2 with GaAs results in a significant decrease in emission intensity of MoS2, with a dependence on the type of substrates observed in the trion to A-exciton emission ratio in photoluminescence spectra. Scanning Kelvin probe microscopy measurements suggest type-I band alignments, indicating the transfer of excitons from the MoS2 monolayer to the GaAs substrate. Overall, these findings shed light on the charge exchange leading to band offsets in 2D/3D heterojunctions and its implications for electronic devices.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Physical
Singh H. Manas, Bijit Choudhuri, P. Chinnamuthu
Summary: This paper compares the advantages of a catalyst-free TiO2-NW/Ge-NW heterostructure to Ge-NW on Si substrate. The presence of TiO2 successfully suppresses GeO2 formation and reduces interface defects, leading to improved optical absorption and electrical characteristics. The Ag/TiO2-NW/Ge-NW/Si device exhibits superior performance with lower dark current and faster temporal response compared to Ag/Ge-NW/Si.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Chemistry, Multidisciplinary
Dae-Myeong Geum, Suhyun Kim, JiHoon Khym, Jinha Lim, SeongKwang Kim, Seung-Yeop Ahn, Tae Soo Kim, Kibum Kang, SangHyeon Kim
Summary: A high-speed and broadband 5 x 5 photodetector array based on MoS2/In0.53Ga0.47As heterojunction was successfully demonstrated, showing good optical performance and fast photoresponse time, making it a promising option for future broadband imagers.
Article
Chemistry, Physical
Bingxu Liu, Yinghui Sun, Yonghuang Wu, Kai Liu, Huanyu Ye, Fangtao Li, Limeng Zhang, Yong Jiang, Rongming Wang
Summary: The high-performance MoS2-based phototransistor with enhanced photoresponse is achieved by interfacing few-layer MoS2 with an ultrathin TiO2 layer. The significantly improved photoresponse of the TiO2/MoS2 device is attributed to both interface charge transfer and photogating effects. These findings provide valuable insights into interactions at TiO2/MoS2 interface and may inspire the development of novel optoelectronic devices based on 2D layered materials.
Article
Chemistry, Multidisciplinary
Mingsheng Long, Zhen Shen, Ruijie Wang, Qingsong Dong, Zhiyi Liu, Xin Hu, Jie Hou, Yuan Lu, Fang Wang, Dongxu Zhao, Fei Ding, Yubing Tu, Tao Han, Feng Li, Zongyuan Zhang, Xingyuan Hou, Shaoliang Wang, Lei Shan
Summary: This study presents an ultra-broadband photodetector based on a FePSe3/MoS2 heterostructure, which achieves high photoresponsivity and external quantum efficiency in the range from solar-blind ultraviolet to longwave infrared.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Physics, Applied
Maolong Yang, Jie You, Liming Wang, Zhao Han, Yichi Zhang, Bo Wang, Ningning Zhang, Dongdong Lin, Tao Liu, Zuimin Jiang, Huiyong Hu
Summary: This paper proposes a MoS2/Ge heterojunction device with a top gate composed of hexagonal boron nitride and graphene. The rectification ratio of the device can be modulated by changing the gate voltage, and the device's photoresponsivity and speed improve significantly when graphene is used as the MoS2 contact electrode. The device exhibits ambipolar photoresponse behavior, making it potentially suitable for wavelength-distinguishing photodetection.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Akshai Shyam, S. Aryalakshmi, Sudip K. Batabyal, Ramasubramanian Swaminathan
Summary: In this study, layered bismuth copper-oxysulfide (BiCuOS) semiconductor was successfully synthesized and verified using various characterization techniques. The BiCuOS semiconductor exhibited p-type behavior with an indirect bandgap of 1.05 eV. A n-Si/BiCuOS/p-CuI heterojunction photodetector was developed, which demonstrated a remarkable response time in milliseconds and a high spectral detectivity of 2.7 x 109 Jones in the red light range (620 nm) under self-powered conditions, and capable detection across the wavelength range of 405-850 nm. The proposed Si/BiCuOS/p-CuI heterojunction shows great potential as a high-performance device for broadband light detection applications.
SENSORS AND ACTUATORS A-PHYSICAL
(2023)
Article
Nanoscience & Nanotechnology
B. J. Ye, Y. S. Liu, F. Xie, X. F. Yang, Y. Gu, X. M. Zhang, W. Y. Qian, C. Zhu, N. Y. Lu, G. Q. Chen, G. F. Yang
Summary: In this study, a WSe2/GaN heterojunction photodetector was fabricated by transferring layered tungsten selenide onto a gallium nitride substrate using a mechanical exfoliation method. The device exhibited good rectifying behavior and dual-wavelength photoresponse. Density functional theory calculations confirmed the type I energy band alignment of the heterojunction.
MATERIALS TODAY NANO
(2023)
Article
Physics, Multidisciplinary
Mubashir A. Kharadi, Gul Faroz A. Malik, Sparsh Mittal
Summary: A novel method was reported to achieve half-metallicity in silicene by functionalizing with Br-atoms, resulting in stable antiferromagnetic (AFM) configuration and tunable polarization properties in half-Br-silicene.
Article
Engineering, Electrical & Electronic
Mubashir A. Kharadi, Gul Faroz A. Malik, Sparsh Mittal
Summary: This article introduces a spin caloritronic device based on zigzag silicene nanoribbons, which generates spin current by applying thermal gradient without any external electrical bias and exhibits a high value of thermally assisted magnetoresistance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Chemistry, Physical
Shazia Rashid, Faisal Bashir, Farooq A. Khanday, M. Rafiq Beigh
Summary: This study presents the design and simulation of a novel double-gate L-shaped Schottky barrier MOSFET (DG-LS-SB-MOSFET). The device exhibits improved performance compared to conventional devices, with high on-current and enhanced RF/analog parameters. It also shows a reduction in ON and OFF delay in the inverter configuration.
Article
Biochemical Research Methods
Shazia Rashid, Faisal Bashir, Farooq A. A. Khanday, M. Rafiq Beigh
Summary: In this paper, a novel double gate tunnel FET structure is proposed and simulated for biosensing applications. The device incorporates III-V compound semiconductors and an n+ doped pocket at the source channel junction. It utilizes nano-gap cavities to capture biomolecules with different dielectric constants and charge densities. The proposed biosensor shows significantly improved sensitivity compared to previous work.
IEEE TRANSACTIONS ON NANOBIOSCIENCE
(2023)
Article
Engineering, Electrical & Electronic
Zaid Mohammad Shah, Farooq Ahmad Khanday, Zahoor Ahmad Jhat
Summary: This paper presents the fabrication of packaged, flexible, and planar fractional-order capacitors (FOCs) using copper foil electrodes and thin films of PVDF polymer nanocomposite dielectric. A comparison of FOC properties using graphene nanosheets (GNS) and reduced graphene oxide (rGO) as conductive fillers is conducted. The results show similar fractional-order behavior in both types of FOCs, but differences in pseudocapacitance values and the width of the constant phase (CP) zone.
JOURNAL OF ELECTRONIC MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Mubashir A. Kharadi, Sparsh Mittal, Jhuma Saha
Summary: Silicon (Si) is a great material for electronic applications, but not suitable for optoelectronic applications due to its indirect bandgap. Using the first principles approach, we studied different stacking patterns in bilayer silicene and found that only the AB-stacked silicene is stable. Among different fluorinated configurations, the 2F-AB-stacked bilayer silicene has a direct bandgap of 1.23 eV, making it suitable for light detection applications in the visible and near-infrared range.
Article
Engineering, Electrical & Electronic
Hilal A. Bhat, Farooq A. Khanday, Brajesh K. Kaushik, Khurshed A. Shah
Summary: This paper introduces the use of quantum computing, a modern technology that applies the laws of quantum mechanics to address issues beyond the capabilities of traditional computing paradigms. The paper focuses on the design of reversible gates for quantum circuit realization and presents the functional matrices of most gates. Additionally, it presents the quantum implementation of URG, FRSG1, R, and JTF1 gates, which are important in various practical applications. The paper concludes with a comparison of performance parameters, highlighting the advantages of each gate.
JOURNAL OF COMPUTATIONAL ELECTRONICS
(2023)
Article
Chemistry, Physical
Shazia Rashid, Faisal Bashir, Farooq A. Khanday, M. Rafiq Beigh
Summary: This article presents a novel structure for efficient label-free biosensing applications. The proposed device is a 6H-Silicon Carbide based double gate Schottky Barrier FET with two cavities for biomolecule detection. The simulations demonstrate high sensitivities and selectivities of the proposed biosensor for both neutral and charged biomolecules. The device also exhibits a strong positive correlation between I-ON/I-OFF and the dielectric property of the biomolecules.
Review
Materials Science, Multidisciplinary
M. Ashraf Allaie, Khurshed A. Shah, S. M. A. Andrabi
Summary: This review summarizes the synthetic routes (physical, chemical and biological) for the preparation of bimetallic nanoparticles and their applications in water pollution remediation. The study shows that bimetallic nanoparticles are efficient for the removal of organic, inorganic and biological pollutants from water. A comprehensive review of the use of various bimetallic nanoparticles for water treatment is presented in the form of a table, along with a detailed discussion on future perspectives and challenges in the field.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2023)
Article
Computer Science, Artificial Intelligence
Mudasir A. A. Khanday, Shazia Rashid, Farooq A. A. Khanday
Summary: This study presents a novel double-gate ferroelectric junctionless field effect transistor (DG-FE-JLFET) neuron in 20 nm technology node to meet the increasing demand for highly scalable and energy-efficient neuron devices in future neuromorphic computing. The proposed neuron accurately mimics the spiking behavior of biological neurons with significantly reduced energy consumption compared to previous designs. It does not require additional circuitry, simplifying the design complexity and enabling higher neuron density for large scale integration neuromorphic chips. The practical applicability of the proposed neuron has been validated through image classification with high accuracy.
NEURAL PROCESSING LETTERS
(2023)
Article
Physics, Multidisciplinary
Shazia Showket, Khurshed A. Shah, G. N. Dar
Summary: In this study, the sensitivity of two VOCs, formaldehyde (FD) and acetaldehyde (AD), adsorbed on the surface of two-dimensional Armchair Silicene Nanoribbon (ASiNR) was investigated using DFT and NEGF. The results showed that the vacancy-defected models exhibited a significant increase in adsorption energies for VOCs compared to other models. The current in all models increased with applied voltage, and the Al/P co-doped model showed the highest current at a bias voltage of 2 V. The variation in transmission spectrum peaks confirmed the sensitivity of the proposed models to the VOC molecules. Furthermore, the Al/P co-doped model exhibited high sensitivity towards FD and AD molecules at 68% and 77%, respectively.
Article
Engineering, Electrical & Electronic
Mudasir A. Khanday, Farooq A. Khanday, Faisal Bashir, Furqan Zahoor
Summary: A single transistor leaky integrate-and-fire neuron based on the band to band tunneling mechanism is proposed, which achieves significant improvement in energy consumption and integration density. The device exploits the forward transfer characteristics of Tunnel FET to accurately emulate the spiking behavior of a biological neuron. Through calibrated simulation, it is demonstrated that the proposed LIF neuron consumes significantly less energy (750 fJ/spike) compared to previous 1-T neurons. The neuron is also used to implement reconfigurable threshold logic gates and demonstrates high accuracy (96.27%) in image recognition tasks, showcasing its potential for future neuromorphic computing.
IEEE TRANSACTIONS ON NANOTECHNOLOGY
(2023)
Article
Quantum Science & Technology
Hilal A. Bhat, Farooq A. Khanday, B. K. Kaushik
Summary: This paper presents novel and efficient controlled adder/subtractor designs using reversible quantum computing and matrix modeling approach. Significant improvements in performance parameters have been achieved, with optimized quantum cost improvements of up to 31.25%. The proposed designs are found to be more efficient than existing separate adder/subtractor and combined designs.
QUANTUM INFORMATION PROCESSING
(2023)
Article
Engineering, Electrical & Electronic
Muzaffar A. Najar, Khurshed A. Shah, Shabir A. Parah
Summary: This paper examines the impact of fluorination on zigzag/armchair silicene nanoribbon and models a spin diode based on half-fluorinated zigzag silicene nanoribbon. By calculating the spin-dependent transport characteristics, the performance of this model device is evaluated and spin diode logic operations are realized.
IEEE TRANSACTIONS ON NANOTECHNOLOGY
(2023)
