High-efficiency bulk heterojunction memory devices fabricated using organometallic halide perovskite:poly(N-vinylcarbazole) blend active layers
出版年份 2016 全文链接
标题
High-efficiency bulk heterojunction memory devices fabricated using organometallic halide perovskite:poly(N-vinylcarbazole) blend active layers
作者
关键词
-
出版物
DALTON TRANSACTIONS
Volume 45, Issue 2, Pages 484-488
出版商
Royal Society of Chemistry (RSC)
发表日期
2015-11-21
DOI
10.1039/c5dt03969j
参考文献
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