Multiscale Charge Transport in van der Waals Thin Films: Reduced Graphene Oxide as a Case Study

Large area van der Waals (vdW) thin films are assembled materials consisting of a network of randomly stacked nanosheets. The multiscale structure and the two-dimensional (2D) nature of the building block mean that interfaces naturally play a crucial role in the charge transport of such thin films. While single or few stacked nanosheets (i.e., vdW heterostructures) have been the subject of intensive works, little is known about how charges travel through multilayered, more disordered networks. Here, we report a comprehensive study of a prototypical system given by networks of randomly stacked reduced graphene oxide 2D nanosheets, whose chemical and geometrical properties can be controlled independently, permitting to explore percolated networks ranging from a single nanosheet to some billions with room-temperature resistivity spanning from 10(-5) to 10(-1) Omega.m. We systematically observe a clear transition between two different regimes at a critical temperature T*: Efros-Shklovskii variable-range hopping (ES-VRH) below T* and power law behavior above. First, we demonstrate that the two regimes are strongly correlated with each other, both depending on the charge localization length., calculated by the ES-VRH model, which corresponds to the characteristic size of overlapping sp(2) domains belonging to different nanosheets. Thus, we propose a microscopic model describing the charge transport as a geometrical phase transition, given by the metal-insulator transition associated with the percolation of quasi-one-dimensional nanofillers with length., showing that the charge transport behavior of the networks is valid for all geometries and defects of the nanosheets, ultimately suggesting a generalized description on vdW and disordered thin films.

Automated summary

This study comprehensively investigates networks of randomly stacked reduced graphene oxide 2D nanosheets, revealing two different charge transport behaviors at a critical temperature T*: Efros-Shklovskii variable-range hopping (ES-VRH) below T* and power law behavior above. A microscopic model is proposed to describe charge transport as a geometrical phase transition associated with the metal-insulator transition, showing the validity of the charge transport behavior for all geometries and defects of the nanosheets and suggesting a generalized description on van der Waals and disordered thin films.