An Ultrasensitive Gateless Photodetector Based on the 2D Bilayer MoS2-1D Si Nanowire-0D Ag Nanoparticle Hybrid Structure

Atomically thin transition metal dichalcogenides (TMDC) have received much attention due to their wide variety of optical and electronic properties. Among various TMDC materials, molybdenum disulfide (MoS2) has been intensely studied owing to its potential applications in nanoelectronics and optoelectronics. However, two-dimensional MoS2 photodetectors suffer from low responsivity due to low optical cross section. Combining MoS(2 )with plasmonic nanostructures can drastically increase scattering cross section and enhance local light-matter interaction. Moreover, suspended MoS2 has been shown to exhibit higher photoluminescence intensity and strong photogating effect, which can be employed in photodetectors. Herein, we propose an approach to utilize plasmonic nanostructures and physical suspension for 2D MoS2 photosensing enhancement by hybridizing 2D bilayer MoS2, 1D silicon nanowires, and 0D silver nanoparticles. The hybrid structure shows a gateless responsivity of 402.4 A/W at a wavelength of 532 nm, which represents the highest value among the ever reported gateless plasmonic MoS2 photodetector. The great responsivity and large active area results in an exceptional detectivity of 2.34 x 10(12) Jones. This study provides a new approach for designing high-performance 2D TMDC-based optoelectronic devices.

Automated summary

This study proposes an approach to enhance 2D MoS2 photosensing by combining plasmonic nanostructures and physical suspension, resulting in a hybrid structure with high responsivity and large active area. The gateless responsivity of the hybrid structure reaches 402.4 A/W at a wavelength of 532 nm, representing the highest value reported for gateless plasmonic MoS2 photodetectors. The exceptional detectivity of 2.34 x 10(12) Jones highlights the potential of this approach for designing high-performance 2D TMDC-based optoelectronic devices.