Low-Pressure Mechanical Switching of Ferroelectric Domains in PbZr0.48Ti0.52O3

Low-energy switching of ferroelectrics is currently being investigated for energy-efficient nanoelectronics. While conventional methods employ electrical fields to switch the polarization state, mechanical switching is investigated as an interesting alternative low-energy switching concept, if low enough pressures could be achieved. Here, the thickness-dependent mechanical and electrical switching behavior of ferroelectric PbZr0.48Ti0.52O3/YBa2Cu3O7-delta(PZT/YBCO) epitaxial heterostructures grown on single crystalline LaAlO3-(001)(pseudo-cubic)(LAO) substrate is reported. Mechanical switching is found under relatively low force (600 nN; estimated pressure approximate to 0.21 GPa) in atomic force microscopy-based measurements. Mechanically switched domains can be erased by small electric fields and, interestingly, exhibit a surface potential change similar to electrically poled areas. The feasibility of switching these heterostructures with very low pressure makes them promising candidates for nanoscale electromechanical devices.