期刊
MICROMACHINES
卷 11, 期 11, 页码 -出版社
MDPI
DOI: 10.3390/mi11110958
关键词
InAs; InAsSb; type-II superlattice; infrared detector; mid-wavelength infrared (MWIR); unipolar barrier
类别
资金
- National Aeronautics and Space Administration [80NM0018D0004]
The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) has emerged in the last decade as a viable infrared detector material with a continuously adjustable band gap capable of accommodating detector cutoff wavelengths ranging from 4 to 15 mu m and beyond. When coupled with the unipolar barrier infrared detector architecture, the InAs/InAsSb T2SLS mid-wavelength infrared (MWIR) focal plane array (FPA) has demonstrated a significantly higher operating temperature than InSb FPA, a major incumbent technology. In this brief review paper, we describe the emergence of the InAs/InAsSb T2SLS infrared photodetector technology, point out its advantages and disadvantages, and survey its recent development.
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