标题
Chemical trends of deep levels in van der Waals semiconductors
作者
关键词
-
出版物
Nature Communications
Volume 11, Issue 1, Pages -
出版商
Springer Science and Business Media LLC
发表日期
2020-10-23
DOI
10.1038/s41467-020-19247-1
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Correlating the three-dimensional atomic defects and electronic properties of two-dimensional transition metal dichalcogenides
- (2020) Xuezeng Tian et al. NATURE MATERIALS
- Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides
- (2019) Sara Barja et al. Nature Communications
- Tuning Electronic Structure of Single Layer MoS2 through Defect and Interface Engineering
- (2018) Yan Chen et al. ACS Nano
- Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions
- (2018) Yuan Liu et al. NATURE
- Double-slit photoelectron interference in strong-field ionization of the neon dimer
- (2018) Maksim Kunitski et al. Nature Communications
- Quantifying van der Waals Interactions in Layered Transition Metal Dichalcogenides from Pressure-Enhanced Valence Band Splitting
- (2017) Penghong Ci et al. NANO LETTERS
- Band engineering in transition metal dichalcogenides: Stacked versus lateral heterostructures
- (2016) Yuzheng Guo et al. APPLIED PHYSICS LETTERS
- Point Defects and Grain Boundaries in Rotationally Commensurate MoS2 on Epitaxial Graphene
- (2016) Xiaolong Liu et al. Journal of Physical Chemistry C
- Defect-Tolerant Monolayer Transition Metal Dichalcogenides
- (2016) Mohnish Pandey et al. NANO LETTERS
- The intrinsic defect structure of exfoliated MoS2 single layers revealed by Scanning Tunneling Microscopy
- (2016) Péter Vancsó et al. Scientific Reports
- Surface Defects on Natural MoS2
- (2015) Rafik Addou et al. ACS Applied Materials & Interfaces
- Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides
- (2015) Gui-Bin Liu et al. CHEMICAL SOCIETY REVIEWS
- Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
- (2015) Xu Cui et al. Nature Nanotechnology
- Native defects in bulk and monolayerMoS2from first principles
- (2015) Hannu-Pekka Komsa et al. PHYSICAL REVIEW B
- Near-unity photoluminescence quantum yield in MoS2
- (2015) M. Amani et al. SCIENCE
- Single-Layer MoS2 with Sulfur Vacancies: Structure and Catalytic Application
- (2014) Duy Le et al. Journal of Physical Chemistry C
- Defect-Rich MoS2Ultrathin Nanosheets with Additional Active Edge Sites for Enhanced Electrocatalytic Hydrogen Evolution
- (2013) Junfeng Xie et al. ADVANCED MATERIALS
- Band offsets and heterostructures of two-dimensional semiconductors
- (2013) Jun Kang et al. APPLIED PHYSICS LETTERS
- Mn-doped monolayer MoS2: An atomically thin dilute magnetic semiconductor
- (2013) Ashwin Ramasubramaniam et al. PHYSICAL REVIEW B
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
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