Electrical mechanisms of bi-stable memory devices based on an Al/PVK:ZnO NPs/ITO structure with different ZnO NPs annealing temperatures

标题
Electrical mechanisms of bi-stable memory devices based on an Al/PVK:ZnO NPs/ITO structure with different ZnO NPs annealing temperatures
作者
关键词
ZnO, Nanoparticles, Precipitation, Memory, PVK
出版物
CURRENT APPLIED PHYSICS
Volume 16, Issue 10, Pages 1418-1423
出版商
Elsevier BV
发表日期
2016-08-04
DOI
10.1016/j.cap.2016.07.017

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