4.7 Article

Stress fields of finite-size dislocation walls and prediction of back stress induced by geometrically necessary dislocations at grain boundaries

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PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.jmps.2020.104071

关键词

Grain boundaries; Polycrystal; Geometrically necessary dislocations; Crystal plasticity; Dislocation dynamics

资金

  1. Euratom research and training program 2014-2018 [661913]

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At low strain, geometrically necessary dislocations (GND) confined in the close vicinity of grain boundaries can be approximated as a dislocation wall structure called a GND facet. Analytical solutions derived from Field Dislocations Mechanics (FDM) theory allow calculating the stress components associated with the GND facets but are unable to account for the stress field variation induced by finite size effect. Dislocation dynamics simulation is used to investigate the true stress field of GND facets. The geometry, dimension and dislocation density of three generic types of GND facets (twist, tilt and epitaxial facets) are systematically studied. In all cases, the stress field generated by GND facets is proportional to the surface GND density and its spatial distribution can be recovered using FDM solution combined with two scaling parameters identified from DD simulation results. This calculation procedure can be generalized to any crystal structure by relating the components of the surface Nye's tensor to the solutions of simple cubic slip systems. Finally, static and dynamic tests are made to validate the calculation of back stress within regular grains bounded by GND facets. (c) 2020 Elsevier Ltd. All rights reserved.

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