Nonlinear analysis of a crack in 2D piezoelectric semiconductors with exact electric boundary conditions

In this paper, taking the exact electric boundary conditions into account, we propose a double iteration method to analyze a crack problem in a two-dimensional piezoelectric semiconductor. The method consists of a nested loop process with internal and outside circulations. In the former, the electric field and electron density in governing equations are constantly modified with the fixed boundary conditions on crack face and the crack opening displacement; while in the latter, the boundary conditions on crack face and the crack opening displacement are modified. Such a method is verified by numerically analyzing a crack with an impermeable electric boundary condition. It is shown that the electric boundary condition on crack face largely affects the electric displacement intensity factor near a crack tip in piezoelectric semiconductors. Under exact crack boundary conditions, the variation tendency of the electric displacement intensity factor versus crack size is quite different from that under an impermeable boundary condition. Thus, exact crack boundary conditions should be adopted in analysis of crack problems in a piezoelectric semiconductor.

Automated summary

The study presents a double iteration method for analyzing crack problems in piezoelectric semiconductors, showing that the electric boundary condition on the crack face significantly affects the electric displacement intensity factor. Therefore, exact crack boundary conditions should be adopted for accurate analysis.