Influence of rare earth doping concentrations on the properties of spin coated V2O5 thin films and Cu/Nd-V2O5/n-Si Schottky barrier diodes

标题
Influence of rare earth doping concentrations on the properties of spin coated V2O5 thin films and Cu/Nd-V2O5/n-Si Schottky barrier diodes
作者
关键词
V, 2, O, 5, interfacial thin film, MIS type Schottky barrier diodes (SBDs), Spin coating method, Conduction analysis
出版物
INORGANIC CHEMISTRY COMMUNICATIONS
Volume 119, Issue -, Pages 108072
出版商
Elsevier BV
发表日期
2020-07-01
DOI
10.1016/j.inoche.2020.108072

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