A Study of the Relationship Between Endurance and Retention Reliability for a HfOₓ-Based Resistive Switching Memory

出版年份 2020 全文链接

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作者

关键词

出版物

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Volume 20, Issue 3, Pages 541-547

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2020-07-08

DOI

10.1109/tdmr.2020.3007172

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IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

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