期刊
CHEMISTRY OF MATERIALS
卷 32, 期 20, 页码 8947-8955出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.chemmater.0c02929
关键词
-
资金
- US National Science Foundation [DMR-0645304, DMR-1201729, DMR-1611198]
- United States National Science Foundation [CHE-0234872, DUE0511444]
- Basic Science Research Programs through the National Research Foundation of Korea (NRF) - Korean government [2017R1D1A1B03035539, 2020R1F1A1069646]
- National Research Foundation of Korea [2020R1F1A1069646] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Exploring new nonlinear optical (NLO) materials with high laser-induced damage threshold (LIDT) in the infrared (IR) region is vital for the development of technologies relying on tunable laser systems. Herein, we report on a quaternary diamond-like semiconductor, alpha-Li2ZnGeS4, crystallizing in the polar, noncentrosymmetric orthorhombic space group Pna2(1). The wide optical bandgap of 4.07 eV prohibits multiphoton absorption, concurrently yielding an impressive LIDT around 61.5x that of the benchmark NLO material AgGaSe2 at 1064 nm. It also features phase-matchability for three-wave mixing. Notably, the large bandgap and the outstanding LIDT of alpha-Li2ZnGeS4 do not hinder its second harmonic generation (SHG) response. The second-order nonlinear optical coefficient, chi((2)), was estimated to be 26 pm/V, which exceeds that of several commercially available IR-NLO crystals. In general, there is usually a trade-off between the LIDT and the NLO coefficient; however, alpha-Li2ZnGeS4 features an excellent balance between an outstanding LIDT and a strong SHG response, making the compound a promising candidate for next-generation IR-NLO devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据