Chemical bonding at room temperature via surface activation to fabricate low-resistance GaAs/Si heterointerfaces

标题
Chemical bonding at room temperature via surface activation to fabricate low-resistance GaAs/Si heterointerfaces
作者
关键词
Low-temperature direct wafer bonding, Surface activation, Heterointerfaces, Scanning transmission electron microscopy, Low-temperature focused ion beam
出版物
APPLIED SURFACE SCIENCE
Volume 525, Issue -, Pages 146610
出版商
Elsevier BV
发表日期
2020-05-07
DOI
10.1016/j.apsusc.2020.146610

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