Lateral and vertical growth of Mg-doped GaN on trench-patterned GaN films

Influence of substrate misorientation on the optical properties of Mg-doped GaN

(2020) Hanxiao Liu et al.   JOURNAL OF APPLIED PHYSICS

The effect of low-angle off-axis GaN substrate orientation on the surface morphology of Mg-doped GaN epilayers

(2020) Po-Yi Su et al.   JOURNAL OF APPLIED PHYSICS

Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics

(2019) Hanxiao Liu et al.   APPLIED PHYSICS LETTERS

Dopant profiling in p-i-n GaN structures using secondary electrons

(2019) Shanthan R. Alugubelli et al.   JOURNAL OF APPLIED PHYSICS

Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ -${n}$ Junctions With Low Leakage for GaN Power Electronics

(2019) Kai Fu et al.   IEEE ELECTRON DEVICE LETTERS

Design of 1.2 kV Power Switches With Low $R_{\mathrm\scriptscriptstyle ON$ Using GaN-Based Vertical JFET

(2015) Dong Ji et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Survey of Wide Bandgap Power Semiconductor Devices

(2013) Jose Millan et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS