Monolayer 1T-LaN2: Dirac spin-gapless semiconductor of p-state and Chern insulator with a high Chern number
出版年份 2020 全文链接
标题
Monolayer 1T-LaN2: Dirac spin-gapless semiconductor of p-state and Chern insulator with a high Chern number
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 117, Issue 14, Pages 143101
出版商
AIP Publishing
发表日期
2020-10-06
DOI
10.1063/5.0023531
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