期刊
APPLIED PHYSICS LETTERS
卷 117, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/5.0015252
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资金
- French Agence Nationale de la Recherche (ANR) [ANR-17-CE08-0043-02]
- ANR, Investissements d'Avenir program: Labex GANEX [ANR-11-LABX-0014]
- RENATECH network
Low-threshold lasing under pulsed optical pumping is demonstrated at room temperature for III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range. Thresholds in the range of 18 kW/cm(2) have been achieved along with narrow linewidths of 0.07 nm and a large peak-to-background dynamic of 300. We compare this threshold range with the one that can be calculated using a rate equation model. We show that thresholds in the few kW/cm(2) range constitute the best that can he achieved with III-nitride quantum wells at room temperature. The sensitivity of lasing on the fabrication process is also discussed. Published under license by AIP Publishing.
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