期刊
ACS NANO
卷 14, 期 10, 页码 13611-13618出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.0c05721
关键词
2D materials; memristor; nanomechantcs; photocurrent; phase transition
类别
资金
- French grant ANR ANETHUM [ANR-19-CE24-0021]
- French grant MagicValley [ANR-18-CE24-0007]
- French grant Graskop [ANR-19-CE09-0026]
- French grant ANR Deus-nano [ANR-19-CE42-0005]
- European Union's Horizon 2020 research and innovation program [732894]
- French Renatech network
- Chinese/U.S. National Science Foundation EAGER [1838412]
- Chinese/U.S. National Science Foundation MRSEC [DMR-1720530]
- National Natural Science Foundation of China [11874019]
- Chinese/U.S. National Research Council of Science Technology [CAP-18-05-KAERI]
- U.S. Department of Energy (DOE) [DESC0002623]
- Agence Nationale de la Recherche (ANR) [ANR-19-CE24-0021, ANR-19-CE42-0005] Funding Source: Agence Nationale de la Recherche (ANR)
Semiconducting monolayers of a 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measurements, we demonstrate the presence of a partial 2H-1T ' phase transition in a suspended 2D monolayer membrane of MoS2. Electronic transport shows unexpected memristive properties in the MoS2 membrane, in the absence of any external dopants. A strong mechanical softening of the membrane is measured concurrently and may only be related to the 2H-1T ' phase transition, which imposes a 3% directional elongation of the topological 1T ' phase with respect to the semiconducting 2H. We note that only a few percent 2H-1T ' phase switching is sufficient to observe measurable memristive effects. Our experimental results combined with first-principles total energy calculations indicate that sulfur vacancy diffusion plays a key role in the initial nucleation of the phase transition. Our study clearly shows that nanomechanics represents an ultrasensitive technique to probe the crystal phase transition in 2D materials or thin membranes. Finally, a better control of the microscopic mechanisms responsible for the observed memristive effect in MoS2 is important for the implementation of future devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据