Article
Engineering, Environmental
K. Harikrishnan, Gajendar Singh, Amisha Kushwaha, Varun Pratap Singh, Umesh Kumar Gaur, Manu Sharma
Summary: The presence of organic pollutants in the environment poses significant health risks, therefore, monitoring and controlling their levels is imperative. In this study, g-C3N4/BN nanocomposites were synthesized and used as a basis for an electrochemical sensor for detecting hazardous hydroquinone. The sensor demonstrated good sensitivity and practicality.
JOURNAL OF ENVIRONMENTAL CHEMICAL ENGINEERING
(2022)
Review
Biochemical Research Methods
Alejandro Garcia-Miranda Ferrari, Samuel J. Rowley-Neale, Craig E. Banks
Summary: This review challenges the misconception that 2D hexagonal boron nitride (2D-hBN) is non-conductive and highlights its potential as a basis for electroanalytical sensing platforms. Recent developments and trends in utilizing 2D-hBN in electrochemistry are summarized, with a focus on future developments of this often overlooked material.
ANALYTICAL AND BIOANALYTICAL CHEMISTRY
(2021)
Article
Chemistry, Multidisciplinary
Huibin Sun, Yunlei Jiang, Renjie Hua, Runhua Huang, Lei Shi, Yuan Dong, Suxia Liang, Jing Ni, Chi Zhang, Ruoyu Dong, Yingru Song
Summary: Graphene/BN heterostructures exhibit significant thermal rectification behavior, and the rectification ratio increases with the system length. This phenomenon is attributed to the mismatch of out-of-plane phonon vibration modes at the interface. This two-dimensional heterostructure shows promise for thermal management.
Article
Chemistry, Physical
Congcong Zhang, Teng Tu, Jingyue Wang, Yongchao Zhu, Congwei Tan, Liang Chen, Mei Wu, Ruixue Zhu, Yizhou Liu, Huixia Fu, Jia Yu, Yichi Zhang, Xuzhong Cong, Xuehan Zhou, Jiaji Zhao, Tianran Li, Zhimin Liao, Xiaosong Wu, Keji Lai, Binghai Yan, Peng Gao, Qianqian Huang, Hai Xu, Huiping Hu, Hongtao Liu, Jianbo Yin, Hailin Peng
Summary: The scaling of silicon-based transistors faces challenges such as interface imperfections and gate current leakage at sub-ten-nanometre technology nodes. To achieve smaller channel sizes, less interfacial scattering, and more efficient gate-field penetration, high-mobility two-dimensional layered semiconductors are expected as channel materials. However, progress in 2D electronics is hindered by the lack of a high dielectric constant dielectric with an atomically flat and dangling-bond-free surface.
Article
Chemistry, Multidisciplinary
Samuel W. LaGasse, Nicholas V. Proscia, Cory D. Cress, Jose J. Fonseca, Paul D. Cunningham, Eli Janzen, James H. Edgar, Daniel J. Pennachio, James Culbertson, Maxim Zalalutdinov, Jeremy T. Robinson
Summary: This study demonstrates that hBN slabs tuned to the correct thickness can act as optical waveguides, enabling direct coupling of light emission from encapsulated layers into waveguide modes. Experimental and theoretical approaches provide essential details for leveraging hBN slab waveguides in future research and applications.
ADVANCED MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Shaohua Chen, Chenyuan Zhu, Haoyang Gu, Li Wang, Jiajie Qi, Lixiang Zhong, Zhibin Zhang, Chunlei Yang, Guoshuai Shi, Siwen Zhao, Shuzhou Li, Kaihui Liu, Liming Zhang
Summary: The study successfully improved the selectivity of CH4 and achieved efficient electrochemical conversion by designing the interface of monolayer hexagonal boron nitride/copper. Experimental and theoretical calculations both demonstrated that the h-BN/Cu interfacial perimeters provide specific chelating sites to accelerate the conversion of CO.
Article
Materials Science, Multidisciplinary
Ziqiang Hao, Xuechao Liu, Xinfeng Zhu, Minghui Zhang, Meibo Tang, Xiuhong Pan
Summary: This study used low-pressure chemical vapor deposition to prepare uniformly distributed single-crystalline h-BN grains and continuous film on liquid copper. The morphology, crystalline structure, quality, component, and thickness of the material were characterized using microscopic and spectroscopic methods. The study also found differences in the growth mechanism under different background pressures.
MATERIALS RESEARCH EXPRESS
(2022)
Article
Nanoscience & Nanotechnology
Sai Krishna Narayanan, Pratibha Dev
Summary: Quantum emitters (QEs) based on deep-level defects in hexagonal boron nitride (hBN) layers offer promising alternatives for qubit candidates in wide bandgap semiconductors. The 2D form factor of hBN allows for near-deterministic placement of QEs and property-tuning through strain application. However, the 2D nature of hBN presents challenges, including sensitivity of QEs to the environment, which can influence their emission frequencies and brightness. Our density functional theory-based work demonstrates that substrate effects can significantly impact the properties of defects responsible for quantum emission, emphasizing the importance of accounting for substrate effects in the use of hBN in quantum sensing and computing.
ACS APPLIED NANO MATERIALS
(2023)
Article
Nanoscience & Nanotechnology
Jasneet Kaur, Adel Malekkhouyan, Gurpreet S. Selopal, Zhiming M. Wang, Federico Rosei, Hadis Zarrin
Summary: The functionalized hexagonal boron nitride (FhBN) nanoflakes with high proton conductivity were successfully synthesized and demonstrated excellent dispersibility and stability. When composed with Nafion solution, the FhBN-Nafion nanocomposite PEMs showed significantly improved proton conductivities in both in-plane and through-plane directions compared to pure Nafion, making it a promising material for electrochemical energy devices.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Nanoscience & Nanotechnology
Vidur Raj, Dipankar Chugh, Lachlan E. Black, M. M. Shehata, Li Li, Felipe Kremer, Daniel H. Macdonald, Hark Hoe Tan, Chennupati Jagadish
Summary: Research has shown that wafer-scale, few monolayers thick hBN as a passivation layer can significantly improve solar cell performance, with a relatively low interface defect density and potential for high-quality passivation. hBN-based passivation layers are especially useful in cases where the growth of lattice-matched passivation layers is complicated.
NPJ 2D MATERIALS AND APPLICATIONS
(2021)
Article
Chemistry, Multidisciplinary
Gaokai Wang, Jidong Huang, Siyu Zhang, Junhua Meng, Jingren Chen, Yiming Shi, Ji Jiang, Jingzhen Li, Yong Cheng, Libin Zeng, Zhigang Yin, Xingwang Zhang
Summary: A facile submicron-spacing vapor deposition (SSVD) method is reported for growing wafer-scale single crystal h-BN layers with controllable thickness on sapphire substrates. The epitaxial h-BN layer shows high crystalline quality and is demonstrated to have potential applications in a deep ultraviolet photodetector and a ZrS2/h-BN heterostructure. This method provides a promising path towards future 2D semiconductor-based electronics and optoelectronics.
Article
Chemistry, Multidisciplinary
Jiahan Li, Junyong Wang, Xiaotian Zhang, Christine Elias, Gaihua Ye, Dylan Evans, Goki Eda, Joan M. Redwing, Guillaume Cassabois, Bernard Gil, Pierre Valvin, Rui He, Bin Liu, James H. Edgar
Summary: This study demonstrates the growth of high-quality hBN crystals at atmospheric pressure using pure iron as a flux, unexpectedly yielding properties matching the best values reported for hBN. The crystals produced showed excellent quality and were used as a substrate for WSe2 epitaxy, with low defect density and superior electrical insulating properties, showcasing the potential for integrated devices in two-dimensional material research.
Article
Chemistry, Physical
Ainikulangara Sundaran Bhavya, Harris Varghese, Achu Chandran, Kuzhichalil Peethambharan Surendran
Summary: In the era of IoT and sensor networks, the demand for clean and sustainable power sources is high. Triboelectric nanogenerators (TENGs) using liquid-phase exfoliated 2D-hexagonal boron nitride nanosheets (BNNSs) coated on biaxially-oriented polyethylene terephthalate (BoPET) and paper showed significantly enhanced power output compared to traditional assemblies. The BNNSs/BoPET-paper TENG device demonstrated impressive electrical performance, including high output voltage and current density, as well as a peak electric power density under load testing.
Article
Engineering, Electrical & Electronic
Alok Ranjan, Nagarajan Raghavan, Matthew Holwill, Kenji Watanabe, Takashi Taniguchi, Kostya S. Novoselov, Kin Leong Pey, Sean J. O'Shea
Summary: The breakdown field of thin hexagonal boron nitride (h-BN) is analyzed by conduction atomic force microscopy, showing its suitability as a gate dielectric and the influence of 2D layering on breakdown effects. The breakdown voltage statistics follow a tight monomodal Weibull distribution, indicating non-random defect generation preferentially at specific locations.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Review
Chemistry, Physical
Madiha Rafiq, Xiaozhen Hu, Zhiliang Ye, Abdul Qayum, Hong Xia, Liangsheng Hu, Fushen Lu, Paul K. Chu
Summary: Researchers summarized the importance of hexagonal boron nitride (h-BN) as a two-dimensional material in the field of green energy applications, and introduced its potential applications in energy conversion. The article discussed modification strategies to convert insulating h-BN into conductive materials and its progress and applications as an electrocatalyst.
Article
Materials Science, Coatings & Films
Masafumi Hirose, Toshihide Nabatame, Yoshihiro Irokawa, Erika Maeda, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide, Hajime Kiyono
Summary: The study found that postmetallization annealing (PMA) at lower temperatures (300-600 degrees C) significantly improved the interface properties of transistors, while annealing at higher temperatures (700-900 degrees C) led to large frequency dispersion, high fixed charge, and interface state density.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2021)
Article
Physics, Applied
Huanying Sun, Xiulin Shen, Liwen Sang, Masataka Imura, Yasuo Koide, Jianqiang You, Tie-Fu Li, Satoshi Koizumi, Meiyong Liao
Summary: In this study, the thermal mismatch induced stress was precisely measured using the dynamic resonance method on a single-crystal diamond microelectromechanical resonator. The results indicated a linear relationship between the resonance frequency and the induced stress, with a stress resolution as precise as 10(4) Pa, which is three orders of magnitude better than traditional Raman and X-ray diffraction methods.
APPLIED PHYSICS EXPRESS
(2021)
Article
Chemistry, Multidisciplinary
Takashi Tsuchiya, Makoto Takayanagi, Kazutaka Mitsuishi, Masataka Imura, Shigenori Ueda, Yasuo Koide, Tohru Higuchi, Kazuya Terabe
Summary: The study demonstrates that the electric double layer effect with different solid electrolytes can be evaluated using hydrogenated diamond-based transistors, where the transistor with Li-Si-Zr-O solid electrolyte shows significant EDL-induced hole density modulation, while the one with Li-La-Ti-O solid electrolyte shows minimal enhancement, possibly due to charge neutralization in the LLTO caused by variation in the valence state of the Ti ions.
COMMUNICATIONS CHEMISTRY
(2021)
Article
Physics, Applied
Liwen Sang, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Xuelin Yang, Bo Shen
Summary: In this study, a polarization-induced (PI) hole doping method was used to achieve high hole mobility in In-rich InGaN. The In-rich InGaN solar cell with PI doped p-type InGaN showed improved conversion efficiency by over 1.5 times compared to single-layer p-type InGaN.
APPLIED PHYSICS LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Jiangwei Liu, Hirotaka Ohsato, Bo Da, Yasuo Koide
Summary: The ohmic contact resistance, surface resistance, and channel resistance of H-terminated diamond MOSFETs were investigated. It was found that the surface resistance accounts for 75.3% of the total resistance in the planar-type H-diamond MOSFET, limiting its leakage current and extrinsic transconductance, while the ohmic contact resistance occupies 38.8% of the total resistance in the T-type H-diamond MOSFET.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Materials Science, Coatings & Films
Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Takashi Onaya, Koji Shiozaki, Ryota Ochi, Tamotsu Hashizume, Yasuo Koide
Summary: The study explores the growth per cycle (GPC) of SiO2 and HfO2 on different substrates, and the characteristics of capacitors with inserted interface layers. Results suggest that Hf-rich HfSiOx plays a significant role in improving the electrical properties of capacitors.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2021)
Article
Nanoscience & Nanotechnology
Masataka Imura, Hideki Inaba, Takaaki Mano, Nobuyuki Ishida, Fumihiko Uesugi, Yoko Kuroda, Yoshiko Nakayama, Masaki Takeguchi, Yasuo Koide
Summary: The structural quality of AlN layers grown on a sapphire substrate using metal-organic vapor phase epitaxy (MOVPE) was significantly improved by post-growth annealing, resulting in a smoother surface and better crystal quality. This work has implications for the industrial production of AlxGa1-xN-based ultraviolet light-emitters.
Article
Chemistry, Physical
Xu Yang, Shisheng Li, Naoki Ikeda, Yoshiki Sakuma
Summary: A newly developed oxide scale sublimation chemical vapor deposition (OSSCVD) technique for 2D MoS2 growth is reported, allowing stable growth by controlling the supply of MoO3. Using Dragontrail glass as a catalytic substrate enables the growth of large single-crystalline MoS2 domains.
Article
Microscopy
Xiulin Shen, Zhenfei Lv, Kimiyoshi Ichikawa, Huanying Sun, Liwen Sang, Zhaohui Huang, Yasuo Koide, Satoshi Koizumi, Meiyong Liao
Summary: This paper focuses on the micro-cantilever beams used in surface sensing applications and atomic force microscopy. Single-crystal diamond (SCD) cantilever beams fabricated by a smart-cut method were characterized for stress using surface geometry curvature observation and Raman microscopy. The results showed that although there was surface stress in the SCD cantilever beams, their resonance properties remained excellent in terms of rigidity and quality, making them a promising platform for high-reliability microscopy applications.
Article
Materials Science, Multidisciplinary
Yinling Chen, Liwen Sang, Satoshi Koizumi, Yasuo Koide, Xiaoxi Liu, Meiyong Liao
Summary: In this study, we investigated the effect of ambient gas pressure on the quality factor of single-crystal diamond micro cantilevers. The results show that the quality factor remains stable at low pressures but decreases significantly as the pressure increases.
DIAMOND AND RELATED MATERIALS
(2022)
Article
Physics, Applied
Yuichi Ota, Masataka Imura, Ryan G. Banal, Yasuo Koide
Summary: The natural band alignment of BAlN and BGaN alloys was investigated using the atomic solid-state energy scale approach, and it was found that they behave according to the common anion rule. The Schottky barrier height (SBH) was calculated based on the results of band alignment, providing important guidelines for boron nitride and its alloy device design.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Materials Science, Multidisciplinary
Yoshihiro Irokawa, Mari Inoue, Toshihide Nabatame, Yasuo Koide
Summary: The effect of hydrogen on GaN metal-oxide-semiconductor (MOS) capacitors with different gate dielectrics was studied using C-V measurements. Hydrogen exposure caused a negative shift in C-V curves, and the response was reversible. Application of a reverse gate bias accelerated the reversion, indicating hydrogen absorption into the dielectric as positive charges.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2022)
Article
Chemistry, Physical
Xu Yang, Shisheng Li, Yoshiki Sakuma
Summary: A highly efficient method for growing large-area MoS2 monolayer films in a short time is reported. The technique of oxide scale sublimation chemical vapor deposition (OSSCVD) allows for ultrafast deposition of MoS2 on a Dragontrail glass substrate, maintaining large-sized single-crystalline domains over 20 mu m. The gas-controlled OSSCVD with a showerhead configuration enables homogeneous and controllable source supply, resulting in high-quality monolayer MoS2 films with centimeter-scale uniformity. Field-effect transistors fabricated on the films exhibit excellent performance, surpassing results obtained using longer deposition time and higher temperatures. This study highlights the potential for low-cost high-throughput production of large-area high-quality monolayer MoS2.
Article
Chemistry, Physical
Xu Yang, Shisheng Li, Naoki Ikeda, Akihiro Ohtake, Yoshiki Sakuma
Summary: In order to bring atomically thin transition metal dichalcogenides (TMDs) to practical application, a highly reproducible process for large-scale growth is developed. This process involves using molybdenum dichloride dioxide (MoO2Cl2) as the Mo source and integrating it with a standard low-pressure cold-wall MOCVD system. With H2S as the sulfur source and Dragontrail glass (DT-glass) as the substrate, the researchers achieved the growth of carbon-free MoS2 monolayers with high quality and uniformity. This work provides a new method for the large-scale production of high-quality MoS2 monolayers.
APPLIED SURFACE SCIENCE
(2023)
Article
Chemistry, Multidisciplinary
Jaemyung Kim, Okkyun Seo, L. S. R. Kumara, Toshihide Nabatame, Yasuo Koide, Osami Sakata
Summary: The crystal quality of a 6 inch free-standing GaN substrate grown using a Na-flux based liquid phase epitaxy method was demonstrated by recording rocking curve profiles and analyzing lattice plane anisotropic bowing. The competition between crystallinity and homogeneity was observed in the substrate, with a mean rocking curve width of 0.024 degrees indicating almost single crystal quality.
