期刊
ACS APPLIED MATERIALS & INTERFACES
卷 12, 期 40, 页码 45101-45110出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c06173
关键词
MoS2; graphene; CVD; van der Wards heterostructures; photolununescence; surface diffusion
资金
- EU [881603]
- CHARMING project - Research Foundation Flanders [EOS 30467715, G0F6218N]
- PROM PW project - European Social Fund under the Operational Program Knowledge Education Development [POWR. 03.03.00-00-PN13/18]
- PRELUDIUM projects - Polish National Science Centre [UMO-2019/33/N/ST5/01414, UMO-2016/21/N/ST5/03332]
In this work, we report the impact of substrate type on the morphological and structural properties of molybdenum disulfide (MoS,) grown by chemical vapor deposition (CVD). MoS2 synthesized on a three-dimensional (3D) substrate, that is, SiO2, in response to the change of the thermodynamic conditions yielded different grain morphologies, including triangles, truncated triangles, and circles. Simultaneously, MoS, on graphene is highly immune to the modifications of the growth conditions, forming triangular crystals only. We explain the differences between MoS, on SiO, and graphene by the different surface diffusion mechanisms, namely, hopping and gas-molecule-collision-like mechanisms, respectively. As a result, we observe the formation of thermodynamically favorable nuclei shapes on graphene, while on SiO2, a full spectrum of domain shapes can be achieved. Additionally, graphene withstands the growth process well, with only slight changes in strain and doping. Furthermore, by the application of graphene as a growth substrate, we realize van der Waals epitaxy and achieve strain-free growth, as suggested by the photoluminescence (PL) studies. We indicate that PL, contrary to Raman spectroscopy, enables us to arbitrarily determine the strain levels in SiO2.
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