4.8 Article

Large Interlayer Spacing of Few-Layered Cobalt-Tin-Based Sulfide Providing Superior Sodium Storage

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 12, 期 37, 页码 41546-41556

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c11756

关键词

F-CoSnS; MTMSs; few-layered; large interlayer spacing; sodium-ion batteries

资金

  1. Ti an ji n Sci ence and Technology Projec t [18PTZWHZ00020]
  2. Natural Science Foundation of Shaanxi [2020JC-41]
  3. Xi'an Science and Technology Project of China [201805037YD15CG21(20)]
  4. Joint Foundation of Shaanxi [2019JLP-04]
  5. Natural Science Foundation of China [91963113, 51972227]
  6. Natural Science Foundation of Tianjin [18JCQNJC02700]

向作者/读者索取更多资源

Mixed transition metal sulfides (MTMSs) have been regarded as a potential anode material for sodium-ion batteries (SIBs) due to their high reversible specific capacity. Herein, nanoflower-like few-layered cobalt-tin-based sulfide (F-CoSnS) with a large interlayer spacing is synthesized via a facile route for superior sodium storage. The growth mechanism of this unique F-CoSnS is systematically studied. Such distinctive nanostructured engineering synergistically combines a broad interlayer spacing (similar to 0.85 nm), the functionalities of few (2-3) layers, and the introduction of heterogeneous metal atoms, reducing the ion diffusion energy barrier for high-efficiency intercalation/deintercalation of Na+ ions, as revealed by density functional theory (DFT) calculations. With further incorporation of a three-dimensional (3D) conductive network, the F-CoSnS@C electrode shows a large sodium storage capacity (493.4 mAh g(-1) at 50 mA g(-1)), remarkable rate capability (316.1 mAh g(-1) at 1600 mA g(-1)), and superior cycling stability (450 mAh g(-1) at 50 mA g(-1) with 91.2% capacity retention, 0.044% fading rate per cycle, and approximately 100% Coulombic efficiency after 200 cycles). This work demonstrates that the few-layered ternary MTMSs are highly applicable for the development of advanced SIB anode materials with high performance.

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