Influence of surface defect density on the ultrafast hot carrier relaxation and transport in $${\hbox {Cu}}_2 {\hbox {O}}$$ photoelectrodes
出版年份 2020 全文链接
标题
Influence of surface defect density on the ultrafast hot carrier relaxation and transport in $${\hbox {Cu}}_2 {\hbox {O}}$$ photoelectrodes
作者
关键词
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出版物
Scientific Reports
Volume 10, Issue 1, Pages -
出版商
Springer Science and Business Media LLC
发表日期
2020-06-30
DOI
10.1038/s41598-020-67589-z
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