4.8 Article

Unveiling defect -mediated carrier dynamics in monolayer semiconductors by spatiotemporal microwave

出版社

NATL ACAD SCIENCES
DOI: 10.1073/pnas.2004106117

关键词

transition-metal dichalcogenides; defects; charge carriers; spatiotemporal dynamics; laser-illuminated microwave impedance; microscopy

资金

  1. NSF through the Center for Dynamics and Control of Materials, an NSF Materials Research Science and Engineering Center (MRSEC) [DMR-1720595]
  2. NSF MRSEC
  3. US Army Research Office [W911NF-16-1-0276, W911NF-17-1-0190]
  4. Welch Foundation [F-1662, F-1814]
  5. Department of Energy, Basic Energy Science [DE-SC0019398]
  6. King Abdullah University of Science and Technology, Office of Sponsored Research [CRF-2016-2996-CRG5]
  7. American Chemical Society (ACS) [ACS PRF 54717-DNI10]
  8. Office of Basic Energy Sciences, of the US Department of Energy [DE-AC02-05CH11231]
  9. UT-Austin
  10. NSF [EFMA-1542747]
  11. US Army Research Laboratory
  12. U.S. Department of Energy (DOE) [DE-SC0019398] Funding Source: U.S. Department of Energy (DOE)

向作者/读者索取更多资源

The optoelectronic properties of atomically thin transition -metal dichalcogenides are strongly correlated with the presence of de- fects in the materials, which are not necessarily detrimental for certain applications. For instance, defects can lead to an enhanced photoconduction, a complicated process involving charge genera- tion and recombination in the time domain and carrier transport in the spatial domain. Here, we report the simultaneous spatial and temporal photoconductivity imaging in two types of WS 2 mono - layers by laser -illuminated microwave impedance microscopy. The diffusion length and carrier lifetime were directly extracted from the spatial profile and temporal relaxation of microwave signals, respectively. Time -resolved experiments indicate that the critical process for photoexcited carriers is the escape of holes from trap states, which prolongs the apparent lifetime of mobile electrons in the conduction band. As a result, counterintuitively, the long-lived photoconductivity signal is higher in chemical -vapor deposited (CVD) samples than exfoliated monolayers due to the presence of traps that inhibits recombination. Our work reveals the intrinsic time and length scales of electrical response to photoexcitation in van der Waals materials, which is essential for their applications in optoelectronic devices.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

Article Chemistry, Multidisciplinary

Room-Temperature Magnetic Skyrmions and Large Topological Hall Effect in Chromium Telluride Engineered by Self-Intercalation

Chenhui Zhang, Chen Liu, Junwei Zhang, Youyou Yuan, Yan Wen, Yan Li, Dongxing Zheng, Qiang Zhang, Zhipeng Hou, Gen Yin, Kai Liu, Yong Peng, Xi-Xiang Zhang

Summary: This study reports a layered crystal structure transition metal dichalcogenide, Cr1+xTe2, that hosts room-temperature skyrmions and exhibits large topological Hall effect (THE). By manipulating the intercalation, the Curie temperature and magnetic anisotropy of the material can be controlled. Room-temperature skyrmions are successfully created in Cr1.53Te2, which have a relatively weak perpendicular magnetic anisotropy and induce a sign reversal of THE at low temperatures.

ADVANCED MATERIALS (2023)

Article Nanoscience & Nanotechnology

Electrically switchable anisotropic polariton propagation in a ferroelectric van der Waals semiconductor

Yue Luo, Nannan Mao, Dapeng Ding, Ming-Hui Chiu, Xiang Ji, Kenji Watanabe, Takashi Taniguchi, Vincent Tung, Hongkun Park, Philip Kim, Jing Kong, William L. Wilson

Summary: In-plane anisotropic exciton-polariton propagation in SnSe allows for nanoscale imaging of in-plane ferroelectric domains. The control and manipulation of exciton-polaritons in two-dimensional quantum materials has the potential for nanoscale control of electromagnetic fields. By studying the propagation dynamics and dispersion of exciton-polaritons in SnSe, a group-IV monochalcogenide semiconductor, it was found that this propagation enables imaging of the in-plane ferroelectric domains. Additionally, electric switching of exciton-polaritons in the ferroelectric domains of this complex van der Waals system was demonstrated, suggesting the potential for reconfigurable polaritonic optical devices.

NATURE NANOTECHNOLOGY (2023)

Article Chemistry, Multidisciplinary

Current-Induced Reversible Split of Elliptically Distorted Skyrmions in Geometrically Confined Fe3Sn2 Nanotrack

Zhipeng Hou, Qingping Wang, Qiang Zhang, Senfu Zhang, Chenhui Zhang, Guofu Zhou, Xingsen Gao, Guoping Zhao, Xixiang Zhang, Wenhong Wang, Junming Liu

Summary: This study experimentally explores the current-driven dynamics of elliptically distorted skyrmions in geometrically confined magnet Fe3Sn2. It is found that the elliptical skyrmions can reversibly split into smaller-sized circular skyrmions at a specific current density with the current injected along their minor axis. The results indicate that the morphology provides a new degree of freedom for manipulating the current-driven dynamics of skyrmions, offering a compelling route for the future development of spintronic devices.

ADVANCED SCIENCE (2023)

Article Nanoscience & Nanotechnology

Nonlocal Spin Valves Based on Graphene/Fe3GeTe2 van der Waals Heterostructures

Xin He, Chenhui Zhang, Dongxing Zheng, Peng Li, John Q. Xiao, Xixiang Zhang

Summary: With the recent advancements in two-dimensional ferromagnets, it is now feasible to develop high-quality all-2D spintronic devices. In this study, nonlocal spin valves were successfully fabricated using Fe3GeTe2 as the spin source and detector and multilayer graphene as the spin transport channel. The spin transport signal strongly depended on temperature and vanished below the Curie temperature of the Fe3GeTe2 flakes. Our results suggest potential applications of van der Waals heterostructures in spintronic devices.

ACS APPLIED MATERIALS & INTERFACES (2023)

Article Chemistry, Multidisciplinary

Interfacial Reconstructed Layer Controls the Orientation of Monolayer Transition-Metal Dichalcogenides

Areej Aljarb, Jiacheng Min, Mariam Hakami, Jui-Han Fu, Rehab Albaridy, Yi Wan, Sergei Lopatin, Dimitrios Kaltsas, Dipti Naphade, Emre Yengel, Mohamed Nejib Hedhili, Roaa Sait, Abdul-Hamid Emwas, Arwa Kutbee, Merfat Alsabban, Kuo-Wei Huang, Kaimin Shih, Leonidas Tsetseris, Thomas D. Anthopoulos, Vincent Tung, Lain-Jong Li

Summary: Growing continuous monolayer films of TMDs without disrupting grain boundaries is a challenge. The presence of an interfacial reconstructed (IR) layer within the substrate-epilayer gap affects the orientations of nucleating TMDs domains and materials' properties. These findings have implications for the development of TMD-based electronics and optoelectronics.

ACS NANO (2023)

Article Chemistry, Multidisciplinary

The Bulk van der Waals Layered Magnet CrSBr is a Quasi-1D Material

Julian Klein, Benjamin Pingault, Matthias Florian, Marie-Christin Heissenbuettel, Alexander Steinhoff, Zhigang Song, Kierstin Torres, Florian Dirnberger, Jonathan B. Curtis, Mads Weile, Aubrey Penn, Thorsten Deilmann, Rami Dana, Rezlind Bushati, Jiamin Quan, Jan Luxa, Zdenek Sofer, Andrea Alu, Vinod M. Menon, Ursula Wurstbauer, Michael Rohlfing, Prineha Narang, Marko Loncar, Frances M. Ross

Summary: In this study, it was found that the magnetic semiconductor CrSBr behaves like a quasi-1D material in a magnetically ordered environment. The strong 1D electronic character of CrSBr originates from the Cr-S chains and the weak interlayer hybridization, leading to anisotropy in effective mass and dielectric screening. Moreover, CrSBr hosts spectrally narrow excitons of high binding energy and oscillator strength due to reduced dimensionality and interlayer coupling. Overall, CrSBr is an experimentally attractive candidate for the study of exotic exciton and 1D-correlated many-body physics.

ACS NANO (2023)

Article Chemistry, Multidisciplinary

Nonvolatile Magnetoelectric Switching of Magnetic Tunnel Junctions with Dipole Interaction

Aitian Chen, Ren-Ci Peng, Bin Fang, Tiannan Yang, Yan Wen, Dongxing Zheng, Chenhui Zhang, Chen Liu, Zibin Li, Peisen Li, Yan Li, Yonggang Zhao, Ce-Wen Nan, Ziqiang Qiu, Long-Qing Chen, Xi-Xiang Zhang

Summary: This study successfully demonstrates voltage-driven full resistance switching of a magnetic tunnel junction (MTJ) with dipole interaction on a ferroelectric substrate through switchable parallel/antiparallel magnetization alignment. By rotating the magnetic easy axis via strain-mediated magnetoelectric coupling, the parallel magnetizations in the MTJ reorient to the x axis with opposite paths because of dipole interaction, thus resulting in antiparallel alignment. Moreover, this voltage switching of MTJs is nonvolatile and can be well understood via phase field simulations. These results provide an avenue to realize electrical switching of MTJs and are significant for exploring energy-efficient spintronic devices.

ADVANCED FUNCTIONAL MATERIALS (2023)

Article Chemistry, Multidisciplinary

Giant Nonlinear Optical Response via Coherent Stacking of In-Plane Ferroelectric Layers

Nannan Mao, Yue Luo, Ming-Hui Chiu, Chuqiao Shi, Xiang Ji, Tymofii S. S. Pieshkov, Yuxuan Lin, Hao-Lin Tang, Austin J. J. Akey, Jules A. A. Gardener, Ji-Hoon Park, Vincent C. Tung, Xi Ling, Xiaofeng Qian, William L. L. Wilson, Yimo Han, William A. A. Tisdale, Jing Kong

Summary: Thin ferroelectric material SnSe with nanometer-scale ferroelectric domains exhibiting giant nonlinear optical effect and coherent enhancement of second-harmonic fields was reported. The ferroelectric domains show 90 degrees/270 degrees twin boundaries or 180 degrees domain walls and have parallel and antiparallel stacking of neighboring van der Waals ferroelectric layers. The second-harmonic generation in SnSe was observed to be 100 times more intense than monolayer WS2, demonstrating its potential in on-chip nonlinear optical components and nonvolatile memory devices.

ADVANCED MATERIALS (2023)

Article Nanoscience & Nanotechnology

Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors

Kwan-Ho Kim, Seyong Oh, Merrilyn Mercy Adzo Fiagbenu, Jeffrey Zheng, Pariasadat Musavigharavi, Pawan Kumar, Nicholas Trainor, Areej Aljarb, Yi Wan, Hyong Min Kim, Keshava Katti, Seunguk Song, Gwangwoo Kim, Zichen Tang, Jui-Han Fu, Mariam Hakami, Vincent Tung, Joan M. M. Redwing, Eric A. A. Stach, Roy H. H. Olsson, Deep Jariwala

Summary: Three-dimensional monolithic integration of memory devices with logic transistors is crucial for enhancing computational power and energy efficiency in big data applications, such as artificial intelligence. However, there is still a need for reliable, compact, fast, energy-efficient, and scalable memory devices. In this study, back-end-of-line-compatible FE-FETs using two-dimensional MoS2 channels and AlScN ferroelectric materials were successfully demonstrated, showing promising performance and stability in memory retention and endurance. This research paves the way for the integration of two-dimensional semiconductor memory with silicon complementary metal-oxide-semiconductor logic in a three-dimensional heterostructure.

NATURE NANOTECHNOLOGY (2023)

Article Multidisciplinary Sciences

Proton-mediated reversible switching of metastable ferroelectric phases with low operation voltages

Xin He, Yinchang Ma, Chenhui Zhang, Aiping Fu, Weijin Hu, Yang Xu, Bin Yu, Kai Liu, Hua Wang, Xixiang Zhang, Fei Xue

Summary: Using protonic gating technology, this study creates a series of metastable ferroelectric phases in layered alpha-In2Se3 transistors and demonstrates their reversible transitions. Protons can be incrementally injected or extracted by varying the gate bias, enabling controllable tuning of the ferroelectric alpha-In2Se3 protonic dynamics and obtaining numerous intermediate phases. The volatile gate tuning of alpha-In2Se3 protonation and the formation of metastable hydrogen-stabilized alpha-In2Se3 phases are unexpectedly discovered. Ultralow gate voltage switching of different phases is achieved, providing a possible avenue for accessing hidden phases in ferroelectric switching.

SCIENCE ADVANCES (2023)

Article Engineering, Electrical & Electronic

Molecular Bridges Link Monolayers of Hexagonal Boron Nitride during Dielectric Breakdown

Alok Ranjan, Sesn J. O'Shea, Andrea Padovani, Tong Su, Paolo La Torraca, Yee Sin Ang, Manveer Singh Munde, Chenhui Zhang, Xixiang Zhang, Michel Bosman, Nagarajan Raghavan, Kin Leong Pey

Summary: We used conduction atomic force microscopy (CAFM) to investigate the soft breakdown of monocrystalline hexagonal boron nitride (h-BN) and analyzed the defect generation and dielectric degradation by charge transport simulations and density functional theory (DFT) calculations. The results showed that defects were gradually generated over time, leading to an increase in current before dielectric breakdown. Different types of defects were observed, with defects formed from adjacent boron and nitrogen monovacancies having the lowest formation energy. The electrical shorting between layers due to the formation of these defects was confirmed by charge transport simulations, while physical removal of h-BN layers during soft breakdown was ruled out.

ACS APPLIED ELECTRONIC MATERIALS (2023)

Article Engineering, Electrical & Electronic

Field-free switching of perpendicular magnetization at room temperature using out-of-plane spins from TaIrTe4

Yakun Liu, Guoyi Shi, Dushyant Kumar, Taeheon Kim, Shuyuan Shi, Dongsheng Yang, Jiantian Zhang, Chenhui Zhang, Fei Wang, Shuhan Yang, Yuchen Pu, Peng Yu, Kaiming Cai, Hyunsoo Yang

Summary: In this study, we report the field-free switching of perpendicular magnetic anisotropy ferromagnet cobalt iron boron using out-of-plane spin-polarized current generated by the Weyl semimetal tantalum iridium telluride. Our results suggest that TaIrTe4 is an efficient spin current source for field-free spin-orbit torque applications.

NATURE ELECTRONICS (2023)

Article Chemistry, Multidisciplinary

Switching magnetic strip orientation using electric fields

Aitian T. Chen, Hong-Guang Piao, Chenhui Zhang, Xiao-Ping Ma, Hanin Algaidi, Yinchang Ma, Yan Li, Dongxing Zheng, Ziqiang Qiu, Xi-Xiang Zhang

Summary: In spintronics, controlling the orientation of ordered magnetic domains is crucial for various applications. This study shows that by applying electric fields to a ferroelectric substrate, ordered magnetic strip domains in Ni films can be switched between the y- and x-axes, providing an energy-efficient approach for manipulating magnetic domains using electric fields.

MATERIALS HORIZONS (2023)

Article Chemistry, Physical

Capillary-induced self-crumpled and sulfur-deficient MoS2 nanosheets inhibit polysulfide cycling in lithium-sulfur batteries

Rohan Paste, Shenghan Li, Jui-Han Fu, Yu-Hsiang Chiang, Arif I. Inamdar, Ming-Hsi Chiang, Vincent Tung, Hong-Cheu Lin, Chih Wei Chu

Summary: Stable lithium-sulfur batteries have the potential to be the next generation of stable energy-storage devices. This study introduces a modified separator (MC separator) with crumpled MoS2 nanosheets, which can adsorb lithium polysulfides and provide additional reaction sites, leading to enhanced specific capacity and cycling stability of the battery.

JOURNAL OF MATERIALS CHEMISTRY A (2023)

Article Chemistry, Physical

Resonance-enhanced excitation and relaxation dynamics of coherent phonons in Fe1.14Te

Ning Li, Chenhui Zhang, Weizheng Liang, Yaohua Jiang, Xi-Xiang Zhang, Yang Mi, Sheng-Nian Luo

Summary: This work investigates the generation mechanism and relaxation dynamics of coherent phonons in Fe1.14Te, the parent compound of chalcogenide superconductors, using femtosecond transient optical spectroscopy. The experimental results show that the phonon frequency decreases with increasing temperature, while the phonon dephasing time is temperature independent. The maximum photosusceptibility of the A(1g) phonons is obtained through the resonance Raman effect.

PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2023)

暂无数据