期刊
OPTICS EXPRESS
卷 28, 期 18, 页码 26111-26121出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.397377
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- Deutsche Forschungsgemeinschaft [AS 310/5-1]
We create and isolate single-photon emitters with a high brightness approaching 10(5) counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in the infrared spectral range with a spectrally narrow zero phonon line in the telecom O-band and shows a high photostability even after days of continuous operation. The origin of the emitters is attributed to one of the carbon-related color centers in silicon, the so-called G center, allowing purification with the C-12 and Si-28 isotopes. Furthermore, we envision a concept of a highly-coherent scalable quantum photonic platform, where single-photon sources, waveguides and detectors are integrated on an SOI chip. Our results provide a route towards the implementation of quantum processors, repeaters and sensors compatible with the present-day silicon technology. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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