Effect of barrier width between GaAs/InGaAs/GaAs double coupled quantum wells on bipolar transport and terahertz radiation by hot carriers in lateral electric field

Phase modulation of mid-infrared radiation in double-quantum-well structures under a lateral electric field

(2017) R. M. Balagula et al.   SEMICONDUCTORS

Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields

(2016) R. M. Balagula et al.   SEMICONDUCTORS

Terahertz Radiation Emission by Hot Electrons from AlGaN/GaN Heterostructure

(2016) V.A. Shalygin et al.   ACTA PHYSICA POLONICA A

Interband and intraband radiation from the n-InGaAs/GaAs heterostructures with quantum wells under the conditions of injection in high lateral electric fields

(2015) P.A. Belevskii et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Hot-electron real-space transfer and longitudinal transport in dual AlGaN/AlN/{AlGaN/GaN} channels

(2015) E Šermukšnis et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Mechanism of contact resistance formation in ohmic contacts with high dislocation density

(2012) A. V. Sachenko et al.   JOURNAL OF APPLIED PHYSICS

Lateral transport and far-infrared radiation of electrons in In x Ga1 − x As/GaAs heterostructures with the double tunnel-coupled quantum wells in a high electric field

(2010) N. V. Baidus et al.   SEMICONDUCTORS

Nature of damped current oscillations in the formation of a static acoustoelectric domain in a n-InGaAs/GaAs quantum-well heterostructure

(2008) P. A. Belevskiĭ et al.   SEMICONDUCTORS