期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 53, 期 47, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/aba570
关键词
GaAs; radiation detectors; time-of-flight; laser-induced transient current technique
资金
- Grant Agency of the Czech Republic [18-12449S]
- Charles University [SVV-2019-267306]
Space charge formation in chromium-compensated GaAs sensors is investigated by the laser-induced transient current technique applying pulsed and DC bias. Formation of non-standard space charge manifested by an appearance of both negatively and positively charged regions in DC biased sensors was revealed during 5 ms after switching bias. Using Monte Carlo simulations of current transients we determined enhanced electron lifetime tau= 150 ns and electron drift mobility mu(d)= 3650 cm(2)Vs(-1). We developed and successfully applied a theoretical model based on fast hole trapping in the system with spatially variable hole conductivity.
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