3D Integrable W/SiNx/n-Si/p-Si 1D1R Unipolar Resistive Random Access Memory Synapse for Suppressing Reverse Leakage in Spiking Neural Network

标题
3D Integrable W/SiNx/n-Si/p-Si 1D1R Unipolar Resistive Random Access Memory Synapse for Suppressing Reverse Leakage in Spiking Neural Network
作者
关键词
-
出版物
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume 20, Issue 8, Pages 4735-4739
出版商
American Scientific Publishers
发表日期
2020-03-03
DOI
10.1166/jnn.2020.17806

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