Diamond Field-Effect Transistors With V2O5-Induced Transfer Doping: Scaling to 50-nm Gate Length

We report on the fabrication and measurement of hydrogen-terminated diamond field-effect transistors (FETs) incorporating V2O5 as a surface acceptor material to induce transfer doping. Comparing a range of gate lengths down to 50 nm, we observe inversely scaling peak output current and transconductance. Devices exhibited a peak drain current of similar to 700 mA/mm and a peak transconductance of similar to 150 mS/mm, some of the highest reported thus far for a diamond metal semiconductor FET (MESFET). Reduced sheet resistance of the diamond surface after V2O5 deposition was verified by four probe measurement. These results show great potential for improvement of diamond FET devices through scaling of critical dimensions and adoption of robust transition metal oxides such as V2O5.