4.7 Article

VLS growth of pure and Au decorated β-Ga2O3 nanowires for room temperature CO gas sensor and resistive memory applications

期刊

APPLIED SURFACE SCIENCE
卷 533, 期 -, 页码 -

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ELSEVIER
DOI: 10.1016/j.apsusc.2020.147476

关键词

beta-Ga2O3 nanowire; Au decoration; CO gas sensing; Resistive memory

资金

  1. Innovation and Development Centre of Sustainable Agriculture from the featured areas research centre program within the framework of Higher Education Sprout Project by the Ministry of Education (MOE), Taiwan
  2. Ministry of Science and Technology, Taiwan [MOST-107-2811-M-005-008]

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High-density single crystalline beta-Ga2O3 nanowires on silicon (1 0 0) substrates were grown by vapour-liquid-solid growth method. We have characterized the pure beta-Ga2O3 nanowires along with the Au-decorated beta-Ga2O3 nanowires. The CO gas sensors at room temperature (RT) have been studied for pure and Au decorated nanowires with multiple-networked array and single nanowire devices. The diameter of the 1D nanostructure ranged from 127 +/- 5 nm. The synthesized nanowires were studied using Field Emission Scanning Electron Microscope (FESEM), Transmission Electron Microscope (TEM), Energy Dispersive X-ray Spectroscopy (EDS), Gracing Incidence X-ray Diffraction (GI-XRD), Photoluminescence (PL), Raman spectroscopy and X-ray Photoelectron Spectroscopy (XPS). Using the Focussed Ion Beam (FIB) technique, single nanowire gas sensor devices were fabricated. Single nanowire RT CO gas sensors using the proposed Au decorated beta-Ga2O3 nanowire achieved remarkable sensitivity for 100 ppm CO gas at room temperature. Besides, we have compared the RT CO gas sensing properties of multiple-networked Au decorated beta-Ga2O3 nanowires with single Au-decorated beta-Ga2O3 nanowire and single pure beta-Ga2O3 nanowire. In addition, bipolar resistive switching property is inspected for the Au/pure beta-Ga2O3 nanowires/p-Si and Au/Au decorated beta-Ga2O3 nanowires/p-Si structures.

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