Transition from Schottky-to-Ohmic contacts in 1T VSe2-based van der Waals heterojunctions: Stacking and strain effects

出版年份 2020 全文链接

标题

作者

关键词

Contact engineering, VSe, 2, -based van der Waals heterojunction, Stacking effect, Strain effect

出版物

Volume 517, Issue -, Pages 146168

出版商

Elsevier BV

发表日期

2020-03-22

DOI

10.1016/j.apsusc.2020.146168

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