期刊
APPLIED PHYSICS LETTERS
卷 116, 期 24, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/5.0002909
关键词
-
资金
- Semiconductor Research Corporation (SRC) [2758.001]
- NSF under the E2CDA program [ECCS 1740286]
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of providing large resistance changes, but lack memory function with high durability. The recent availability of multiferroic materials provides an opportunity to directly couple the change in spin states of a magnetic memory to a charge change in a semiconductor transistor. In this work, we propose and analyze the spin-orbit torque field-effect transistor, a device with the potential to significantly boost the energy efficiency of spin-based memories and to simultaneously offer a palette of functionalities.
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