期刊
ADVANCED MATERIALS
卷 32, 期 31, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202001218
关键词
integrated photonics; nonvolatile photonic switches; phase-change materials; reconfigurable photonics; silicon photonics
类别
资金
- SRC (Intel) [2017-IN-2743]
- Samsung GRO
- AFOSR grant [FA9550-17-C-0017]
- ONR MURI [N00014-17-1-2661]
- National Natural Science Foundation of China [61875099]
- Stanford Non-Volatile Memory Technology Research Initiative (NMTRI)
- Sloan Foundation
- National Science Foundation [NNCI-1542101, 1337840, 0335765]
- National Institutes of Health
- Molecular Engineering & Sciences Institute
- Clean Energy Institute
- Washington Research Foundation
- M. J. Murdock Charitable Trust
- Altatech
- ClassOne Technology
- GCE Market
- SPTS
- [NSF-EFRI-1640986]
Reconfigurability of photonic integrated circuits (PICs) has become increasingly important due to the growing demands for electronic-photonic systems on a chip driven by emerging applications, including neuromorphic computing, quantum information, and microwave photonics. Success in these fields usually requires highly scalable photonic switching units as essential building blocks. Current photonic switches, however, mainly rely on materials with weak, volatile thermo-optic or electro-optic modulation effects, resulting in large footprints and high energy consumption. As a promising alternative, chalcogenide phase-change materials (PCMs) exhibit strong optical modulation in a static, self-holding fashion, but the scalability of present PCM-integrated photonic applications is still limited by the poor optical or electrical actuation approaches. Here, with phase transitions actuated by in situ silicon PIN diode heaters, scalable nonvolatile electrically reconfigurable photonic switches using PCM-clad silicon waveguides and microring resonators are demonstrated. As a result, intrinsically compact and energy-efficient switching units operated with low driving voltages, near-zero additional loss, and reversible switching with high endurance are obtained in a complementary metal-oxide-semiconductor (CMOS)-compatible process. This work can potentially enable very large-scale CMOS-integrated programmable electronic-photonic systems such as optical neural networks and general-purpose integrated photonic processors.
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