期刊
ACS APPLIED MATERIALS & INTERFACES
卷 12, 期 32, 页码 36681-36687出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c07514
关键词
perovskite light-emitting diode; light out-coupling efficiency; interfacial contact; charge injection balance; Al2O3
资金
- National Natural Science Foundation of China [91833303, 61974098, 61674108]
- National Key Research and Development Program of China [2016YFA0202402]
- Jiangsu High Educational Natural Science Foundation [18KJA430012]
- Priority Academic Program Development of Jiangsu Higher Education Institutions
- 111 program
- Collaborative Innovation Center of Suzhou Nano Science and Technology (NANO-CIC)
Unbalanced charge injection is one of the major issues that hampers the efficiency of perovskite light-emitting diodes (PeLEDs). Through engineering the device structure with multiple hole transport layers (HTLs), i.e., poly(9,9-dioctyl-fluorene-co-N-(4-butylphenyl)diphenylamine) (TFB)/poly(9-vinylcarbazole) (PVK) and nickel oxide (NiOx)/TFB/PVK, efficient PeLED devices have been successfully demonstrated. However, in a typical solution-processed PeLED with multiple HTLs, the underlying conjugated HTL could be easily redissolved by the ink of the following one, which not only dramatically deteriorates the electrical property of HTLs but also influences the quality of the top perovskite films. In this work, through inserting a thin atomic layer-deposited aluminum oxide (Al2O3) layer between HTLs and the perovskite layer, an improved interfacial contact can be achieved, which enables us to obtain perovskite films with enhanced characteristics and balanced charge injection in the resultant PeLEDs. In addition, because of the proper refractive index (r), the presence of the Al2O3 layer also favors the light out-coupling of PeLEDs. As a result, we fabricate green PeLEDs with good repeatability and external quantum efficiency of 17.0%, which is approximately 60% higher than that of the control device without Al2O3. Our work provides a promising avenue to enhance interfacial contact between the charge transport layer and perovskite for efficient perovskite-based optoelectronic devices.
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