期刊
AIP ADVANCES
卷 10, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/5.0003817
关键词
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资金
- Natural Science Foundation of China [61975163]
- Natural Science Foundation of Shaanxi Province, China [2020JZ-48]
- Open Project of Key Laboratory of Engineering Dielectrics and Its Applications, Ministry of Education [KEY1805]
In this work, we numerically demonstrated a single narrow band THz absorber based on cylindrically shaped periodical p-type doped silicon with excellent attributes, including polarization insensitivity and optical tunability. Good absorption characteristics were demonstrated at 0.57 THz with an absorption of nearly 99.75% and a quality factor of 11.278. Furthermore, its absorbance could be flexibly tuned from above 99% to less than 35% by changing the pump beam fluence from 0 mu J/cm(2) to 3000 mu J/cm(2). The demonstrated tunability may find potential applications in dynamic functional THz devices.
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