期刊
NATURE COMMUNICATIONS
卷 11, 期 1, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/s41467-020-16056-4
关键词
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资金
- National Science Foundation of China (NSFC) [61734001, 11834017, 11574361, 51572289]
- Strategic Priority Research Program (B) of CAS [XDB30000000]
- Key Research Program of Frontier Sciences of CAS [QYZDB-SSW-SLH004]
- National Key RAMP
- D program of China [2016YFA0300904]
- Youth Innovation Promotion Association CAS [2018013]
- project Academy of Finland [295777, 312297, 314810]
- Academy of Finland Flagship Program [320167]
- European Union [820423]
- ERC [834742]
- [CZ.02.1.01/0.0/0.0/15_003/0000464]
Twist angle between adjacent layers of two-dimensional (2D) layered materials provides an exotic degree of freedom to enable various fascinating phenomena, which opens a research direction-twistronics. To realize the practical applications of twistronics, it is of the utmost importance to control the interlayer twist angle on large scales. In this work, we report the precise control of interlayer twist angle in centimeter-scale stacked multilayer MoS2 homostructures via the combination of wafer-scale highly-oriented monolayer MoS2 growth techniques and a water-assisted transfer method. We confirm that the twist angle can continuously change the indirect bandgap of centimeter-scale stacked multilayer MoS2 homostructures, which is indicated by the photoluminescence peak shift. Furthermore, we demonstrate that the stack structure can affect the electrical properties of MoS2 homostructures, where 30 degrees twist angle yields higher electron mobility. Our work provides a firm basis for the development of twistronics. Interlayer twist angle between vertically stacked 2D material layers can trigger exciting fundamental physics. Here, the authors report precise control of interlayer twist angle of stacked centimeter scale multilayer MoS2 homostructures that enables continuous change in their indirect bandgap, Moire phonons and electrical properties.
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