期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 35, 期 10, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6641/ab9477
关键词
porous semiconductor compounds; electrochemical and photochemical etching; dissolution mechanisms; self-organized phenomena; templated electrodeposition of metals; optical phonon engineering; nonlinear optical properties
类别
资金
- Ministry of Education, Culture and Research of Moldova [20.80009.5007.20]
- Horizon-2020 Spreading Excellence and Widening Participation research and innovation programme of the European Union [810652]
- Alexander von Humboldt Foundation
In this review paper, we present a comparative analysis of the electrochemical dissolution of III-V (InP, GaAs, GaN), II-VI (ZnSe, CdSe) and SiC semiconductor compounds. The resulting morphologies are discussed, including those of porous layers and networks of low-dimensional structures such as nanowires, nanobelts, and nanomembranes. Self-organized phenomena in anodic etching are disclosed, leading to the formation of controlled porous patterns and quasi-ordered distribution of pores. Results of templated electrochemical deposition of metal nanowires, nanotubes and nanodots are summarized. Porosification of some compounds is shown to improve luminescence characteristics as well as to enhance photoconductivity, second harmonic generation and Terahertz emission. Possible applications of porous semiconductor compounds in various areas are discussed.
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