期刊
PHYSICAL REVIEW LETTERS
卷 124, 期 21, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.124.217403
关键词
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资金
- Department of Defense Vannevar Bush Faculty Fellowship [N00014-161-2825, N00014-18-1-2877]
- NSF [PHY-1506284]
- NSF CUA [PHY1125846]
- AFOSR MURI [FA955017-1-0002]
- AFOSR DURIP [FA9550-09-1-0042]
- ARL [W911NF1520067]
- Gordon and Betty Moore Foundation [GBMF4543]
- ONR MURI [N00014-15-1-2761]
- Samsung Electronics
- National Science Foundation [1541959]
- Elemental Strategy Initiative
- CREST, JST [JPMJCR15F3]
The twist degree of freedom provides a powerful new tool for engineering the electrical and optical properties of van der Waals heterostructures. Here, we show that the twist angle can be used to control the spin-valley properties of transition metal dichalcogenide bilayers by changing the momentum alignment of the valleys in the two layers. Specifically, we observe that the interlayer excitons in twisted WSe2/WSe2 bilayers exhibit a high (>60%) degree of circular polarization (DOCP) and long valley lifetimes (> 40 ns) at zero electric and magnetic fields. The valley lifetime can be tuned by more than 3 orders of magnitude via electrostatic doping, enabling switching of the DOCP from similar to 80% in the n-doped regime to <5% in the p-doped regime. These results open up new avenues for tunable chiral light-matter interactions, enabling novel device schemes that exploit the valley degree of freedom.
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