期刊
OPTICS EXPRESS
卷 28, 期 7, 页码 10280-10293出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.389378
关键词
-
类别
资金
- National Research Foundation Singapore [NRF-CRP19-2017-01]
- Ministry of Education Singapore [R-263-000-D45-112]
- Ministry of Education -Singapore [R-263-000-C58-133]
We introduced photon-trapping microstructures into GeSn-based photodetectors for the first time, and achieved high-efficiency photo detection at 2 mu m with a responsivity of 0.11 A/W. The demonstration was realized by a GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode on a GeOI architecture. Compared with the non-photon-trapping counterparts, the patterning and etching of photon-trapping microstructure can be processed in the same step with mesa structure at no additional cost. A four-fold enhancement of photo response was achieved at 2 mu m. Although the incorporation of photo-trapping microstructure degrades the dark current density which increases from 31.5 to 45.2 mA/cm(2) at -1 V, it benefits an improved 3-dB bandwidth of 2.7 GHz at bias voltage at -5 V. The optical performance of GeSn/Ge MQW photon-trapping photodetector manifests its great potential as a candidate for efficient 2 mu m communication. Additionally, the underlying GeOI platform enables its feasibility of monolithic integration with other photonic components such as waveguide, modulator and (de)multiplexer for optoelectronic integrated circuits (OEICs) operating at 2 mu m. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据