InSe/hBN/graphite heterostructure for high-performance 2D electronics and flexible electronics

Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures

(2019) Anyuan Gao et al.   Nature Nanotechnology

Realization of Quantum Hall Effect in Chemically Synthesized InSe

(2019) Kai Yuan et al.   ADVANCED FUNCTIONAL MATERIALS

Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures

(2018) Matthew Hamer et al.   NANO LETTERS

Tuning Rashba Spin–Orbit Coupling in Gated Multilayer InSe

(2018) Kasun Premasiri et al.   NANO LETTERS

Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS2 flake based field effect transistors on SiO2 and hBN substrates

(2018) Changhee Lee et al.   NANOTECHNOLOGY

High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping

(2018) Mengjiao Li et al.   ADVANCED MATERIALS

Experimental Identification of Critical Condition for Drastically Enhancing Thermoelectric Power Factor of Two-Dimensional Layered Materials

(2018) Junwen Zeng et al.   NANO LETTERS

Highly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers

(2016) Jiang Pu et al.   ADVANCED MATERIALS

Electron Doping of Ultrathin Black Phosphorus with Cu Adatoms

(2016) Steven P. Koenig et al.   NANO LETTERS

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

(2016) Denis A. Bandurin et al.   Nature Nanotechnology

Large-scale chemical assembly of atomically thin transistors and circuits

(2016) Mervin Zhao et al.   Nature Nanotechnology

Two-dimensional semiconductors for transistors

(2016) Manish Chhowalla et al.   Nature Reviews Materials

Gate Modulation of Threshold Voltage Instability in Multilayer InSe Field Effect Transistors

(2015) Wei Feng et al.   ACS Applied Materials & Interfaces

High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures

(2015) Garry W. Mudd et al.   ADVANCED MATERIALS

Intrinsic Electron Mobility Exceeding 103 cm2/(V s) in Multilayer InSe FETs

(2015) Sukrit Sucharitakul et al.   NANO LETTERS

High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits

(2015) Lili Yu et al.   NANO LETTERS

Performance improvement of multilayer InSe transistors with optimized metal contacts

(2015) Wei Feng et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors

(2015) Erfu Liu et al.   Nature Communications

Gate Tuning of High-Performance InSe-Based Photodetectors Using Graphene Electrodes

(2015) Wengang Luo et al.   Advanced Optical Materials

Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response

(2015) Wei Feng et al.   Journal of Materials Chemistry C

High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors

(2014) Mahmut Tosun et al.   ACS Nano

Evolution of the Electronic Band Structure and Efficient Photo-Detection in Atomic Layers of InSe

(2014) Sidong Lei et al.   ACS Nano

Back Gated Multilayer InSe Transistors with Enhanced Carrier Mobilities via the Suppression of Carrier Scattering from a Dielectric Interface

(2014) Wei Feng et al.   ADVANCED MATERIALS

Ambipolar MoTe2Transistors and Their Applications in Logic Circuits

(2014) Yen-Fu Lin et al.   ADVANCED MATERIALS

Interface Engineering for High-Performance Top-Gated MoS2Field-Effect Transistors

(2014) Xuming Zou et al.   ADVANCED MATERIALS

High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors

(2014) Saptarshi Das et al.   APPLIED PHYSICS LETTERS

Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals

(2014) A. V. Kretinin et al.   NANO LETTERS

High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response

(2014) Srinivasa Reddy Tamalampudi et al.   NANO LETTERS

Electronics based on two-dimensional materials

(2014) Gianluca Fiori et al.   Nature Nanotechnology

Black phosphorus field-effect transistors

(2014) Likai Li et al.   Nature Nanotechnology

Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping

(2014) Andres Castellanos-Gomez et al.   2D Materials

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

(2013) Gwan-Hyoung Lee et al.   ACS Nano

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices

(2012) S. J. Haigh et al.   NATURE MATERIALS

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

(2011) Branimir Radisavljevic et al.   ACS Nano

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Graphene transistors

(2010) Frank Schwierz   Nature Nanotechnology

Current saturation in zero-bandgap, top-gated graphene field-effect transistors

(2008) Inanc Meric et al.   Nature Nanotechnology

Intrinsic and extrinsic performance limits of graphene devices on SiO2

(2008) Jian-Hao Chen et al.   Nature Nanotechnology

Substrate-limited electron dynamics in graphene

(2008) S. Fratini et al.   PHYSICAL REVIEW B

Electron scattering on microscopic corrugations in graphene

(2007) M.I Katsnelson et al.   PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES

Low-temperature polysilicon thin film transistors on polyimide substrates for electronics on plastic

(2007) A. Pecora et al.   SOLID-STATE ELECTRONICS