期刊
NANO LETTERS
卷 20, 期 4, 页码 2812-2820出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.0c00522
关键词
Linear; GaN; mm-wave; low noise amplifier
类别
资金
- CINT, U.S. Department of Energy, Office of Basic Energy Sciences User Facility at Los Alamos National Laboratory [DE-AC52-06NA25396]
- Sandia National Laboratories [DE-AC04-94AL85000]
- National Science Foundation [ECCS-1542148]
- University of California Center for Design-Enabled Nanofabrication (C-DEN)
- NSF-ECCS award [1711030]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1711030] Funding Source: National Science Foundation
Transistors are the backbone of any electronic and telecommunication system but all known transistors are intrinsically nonlinear introducing signal distortion. Here, we demonstrate a novel transistor with the best linearity achieved to date, attained by sequential turn-on of multiple channels composed of a planar top-gate and several trigate Fin field-effect transistors (FETs), using AlGaN/GaN structures. A highly linearized transconductance plateau of >6 V resulted in a record linearity figure of merit OIP3/P-DC of 15.9 dB at 5 GHz and a reduced third-order intermodulation power by 400x in reference to a conventional planar device. The proposed architecture also features an exceptional performance at 30 GHz with an OIP3/P-DC of >= 8.2 dB and a minimum noise figure of 2.2 dB. The device demonstrated on a scalable Si substrate paves the way for GaN low noise amplifiers (LNAs) to be utilized in telecommunication systems, and is also translatable to other material systems.
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